Invention Application
WO2017024140A1 PHOTORESIST CLEANING COMPOSITION USED IN PHOTOLITHOGRAPHY AND A METHOD FOR TREATING SUBSTRATE THEREWITH
审中-公开
光刻胶中使用的光刻胶清洁组合物及其处理基材的方法
- Patent Title: PHOTORESIST CLEANING COMPOSITION USED IN PHOTOLITHOGRAPHY AND A METHOD FOR TREATING SUBSTRATE THEREWITH
- Patent Title (中): 光刻胶中使用的光刻胶清洁组合物及其处理基材的方法
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Application No.: PCT/US2016/045566Application Date: 2016-08-04
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Publication No.: WO2017024140A1Publication Date: 2017-02-09
- Inventor: CHANG, Randy, Li-Kai , PARRIS, Gene, Everad , CHEN, Hsiu, Mei , LEE, Yi-chia , LIU, Wen, Dar , CHEN, Tianniu , MATZ, Laura, M. , LO, Ryback, Li Chang , MENG, Ling-Jen
- Applicant: AIR PRODUCTS AND CHEMICALS, INC.
- Applicant Address: 7201 Hamilton Boulevard Allentown, PA 18195 US
- Assignee: AIR PRODUCTS AND CHEMICALS, INC.
- Current Assignee: AIR PRODUCTS AND CHEMICALS, INC.
- Current Assignee Address: 7201 Hamilton Boulevard Allentown, PA 18195 US
- Agency: NEAGLE, Damon A.
- Priority: US62/201,352 20150805
- Main IPC: C11D11/00
- IPC: C11D11/00 ; C11D3/39 ; C11D3/34 ; C11D3/00
Abstract:
It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.
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