Invention Application
- Patent Title: METHODS AND APPARATUS FOR SELECTIVE DRY ETCH
- Patent Title (中): 用于选择性干燥蚀刻的方法和设备
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Application No.: PCT/US2017/021854Application Date: 2017-03-10
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Publication No.: WO2017160649A1Publication Date: 2017-09-21
- Inventor: LI, Ning , BALSEANU, Mihaela , XIA, Li-Qun , YANG, Dongqing , WANG, Anchuan
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: 3050 Bowers Avenue Santa Clara, CA 95054 US
- Agency: BLANKMAN, Jeffrey, I.
- Priority: US62/307,537 20160313; US62/336,645 20160514
- Main IPC: B32B38/00
- IPC: B32B38/00 ; B32B9/00
Abstract:
Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.
Information query
