Invention Application
WO2018005187A1 METHODS FOR ERROR CORRECTION WITH RESISTIVE CHANGE ELEMENT ARRAYS
审中-公开
用电阻变化元件阵列进行误差校正的方法
- Patent Title: METHODS FOR ERROR CORRECTION WITH RESISTIVE CHANGE ELEMENT ARRAYS
- Patent Title (中): 用电阻变化元件阵列进行误差校正的方法
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Application No.: PCT/US2017/038478Application Date: 2017-06-21
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Publication No.: WO2018005187A1Publication Date: 2018-01-04
- Inventor: NING, Sheyang
- Applicant: NANTERO, INC.
- Applicant Address: 25B Olympia Avenue Woburn, MA 01801 US
- Assignee: NANTERO, INC.
- Current Assignee: NANTERO, INC.
- Current Assignee Address: 25B Olympia Avenue Woburn, MA 01801 US
- Agency: TOOMEY, Jason
- Priority: US62/357,716 20160701; US15/621,757 20170613; US15/621,788 20170613
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C17/00 ; G11C27/00
Abstract:
Error correction methods for arrays of resistive change elements are disclosed. An array of resistive change elements is organized into a plurality of subsections. Each subsection includes at least one flag bit and a plurality of data bits. At the start of a write operation, all bits in a subsection are initialized. If any data bits fail to initialize, the pattern of errors is compared to the input data pattern. The flag cells are then activated to indicate the appropriate encoding pattern to apply to the input data to match the errors. The input data is then encoded according to this encoding pattern before being written to the array. A second error correction algorithm can be used to correct remaining errors. During a read operation, the encoding pattern indicated by the flag bits is used to decode the read data and retrieve the original input data.
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