发明申请
WO2018034812A1 DILUTE NITRIDE DEVICES WITH ACTIVE GROUP IV SUBSTRATE AND CONTROLLED DOPANT DIFFUSION AT THE NUCLEATION LAYER-SUBSTRATE INTERFACE
审中-公开
具有活性第IV族基底的稀氮化物装置和在成核层 - 基底界面上受控掺杂剂扩散
- 专利标题： DILUTE NITRIDE DEVICES WITH ACTIVE GROUP IV SUBSTRATE AND CONTROLLED DOPANT DIFFUSION AT THE NUCLEATION LAYER-SUBSTRATE INTERFACE
- 专利标题（中）： 具有活性第IV族基底的稀氮化物装置和在成核层 - 基底界面上受控掺杂剂扩散
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申请号： PCT/US2017/043965申请日： 2017-07-26
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公开(公告)号： WO2018034812A1公开(公告)日： 2018-02-22
- 发明人: SUAREZ, Ferran , LIU, Ting , SUKIASYAN, Arsen
- 申请人： SOLAR JUNCTION CORPORATION
- 申请人地址： 401 Charcot Avenue San Jose, CA 95131 US
- 专利权人： SOLAR JUNCTION CORPORATION
- 当前专利权人： SOLAR JUNCTION CORPORATION
- 当前专利权人地址： 401 Charcot Avenue San Jose, CA 95131 US
- 代理机构： LAMBERT, William, R.
- 优先权： US62/377,239 20160819
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L31/0304 ; H01L31/0725 ; H01L31/0687
摘要：
Semiconductor devices having an antimony -containing nucleation layer between a dilute nitride material and an underlying substrate are disclosed. Dilute nitride-containing multijunction solar cells incorporating (Al)InGaPSb/Bi nucleation layers exhibit high efficiency.
IPC分类:
