发明申请
- 专利标题： THREE-DIMENSIONAL MEMORY DEVICE WITH CHARGE CARRIER INJECTION WELLS FOR VERTICAL CHANNELS AND METHOD OF MAKING AND USING THEREOF
- 专利标题（中）： 垂直通道带电荷载体注入井的三维记忆装置及其制造和使用方法
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申请号： PCT/US2017/035024申请日： 2017-05-30
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公开(公告)号： WO2018038786A1公开(公告)日： 2018-03-01
- 发明人: ZHANG, Yanli , ALSMEIER, Johann , KAI, James
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： 6900 North Dallas Parkway Suite 325 Plano, Texas 75024 US
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： 6900 North Dallas Parkway Suite 325 Plano, Texas 75024 US
- 代理机构： RADOMSKY, Leon et al.
- 优先权： US15/244,428 20160823
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/788 ; H01L29/792 ; H01L27/11556 ; H01L27/11582
摘要：
A buried source semiconductor layer and p-doped semiconductor material portions are formed over a first portion of a substrate. The buried source semiconductor layer is an n- doped semiconductor material, and the p-doped semiconductor material portions are embedded within the buried source semiconductor layer. An alternating stack of insulating layers and spacer material layers is formed over the substrate. Memory stack structures are formed through the alternating stack. The spacer material layers are formed as, or are replaced with, electrically conductive layers. The buried source semiconductor layer may be formed prior to, or after, formation of the alternating stack. The buried source semiconductor layer underlies the alternating stack and overlies the first portion of the substrate, and contacts at least one surface of the vertical semiconductor channels. The p-doped semiconductor material portions contact at least one surface of a respective subset of the vertical semiconductor channels.
IPC分类:
