Invention Application
- Patent Title: SELECTIVE AREA DEPOSITION OF METAL LAYERS FROM HETERO-PENTADIENYL METAL COMPLEX PRECURSORS
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Application No.: PCT/US2016/068724Application Date: 2016-12-27
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Publication No.: WO2018125052A1Publication Date: 2018-07-05
- Inventor: MAHDI, Tayseer , ROMERO, Patricio E.
- Applicant: INTEL CORPORATION
- Applicant Address: 2200 Mission College Boulevard Santa Clara, California 95054 US
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: 2200 Mission College Boulevard Santa Clara, California 95054 US
- Agency: STEVENSON, Tyler A. et al.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02
Abstract:
Metal layers including a metal M are selectively deposited on metal surfaces via chemical vapor deposition or atomic layer deposition from a hetero-pentadienyl metal complex precursor of formula (I), wherein L is a ligand; n is 1, 2 or 3; X is NR 1 , S(O)(O), S(O)(R 1 )(R 1 ), S(R 1 )(R 1 ), P(O)(R 1 ), P(R 1 )(R 1 )(R 1 ) or O; each R independently is hydrogen or a straight or branched chain C 1 -C 6 alkyl; each R 1 independently is hydrogen or a straight or branched chain C 1 -C 6 alkyl; and M is a first row late transition metal or a platinum group metal.
Information query
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