A semiconductor power conversion device includes a plurality of device cells in different portions of the active area, each including a respective gate electrode. The device includes a gate pad having a plurality of integrated resistors, each having a respective resistance. The device includes a first gate bus extending between the gate pad and the plurality of gate electrodes in a first portion of the active area. The plurality of gate electrodes in the Fust area is electrically connected to an external uate connection via a first integrated resistor and the first gate bus, and wheren the plurality of gate electrodes in a second portion of the active area is electrically connected to the external gate connection via a second integrated resistor, wherein the first and second integrated resistors have substantially different respective resistance values.