Disclosed in one embodiment is a semiconductor device comprising: a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the semiconductor structure comprises: a first upper surface exposing the first semiconductor layer; a second upper surface on which the second semiconductor layer is arranged; an inclined surface for connecting the first upper surface and the second upper surface; and a groove formed between the first upper surface and the inclined surface, wherein the depth of the groove is 30% or less of a vertical distance between the first upper surface and the second upper surface.