Invention Application
- Patent Title: DETERMINING TILT ANGLE IN PATTERNED ARRAYS OF HIGH ASPECT RATIO STRUCTURES
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Application No.: PCT/US2019/044216Application Date: 2019-07-30
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Publication No.: WO2020028412A1Publication Date: 2020-02-06
- Inventor: THOMPSON, William Dean , KLINE, Regis Joseph , SUNDAY, Daniel F. , WU, Wenli , SORKHABI, Osman , ZHANG, Jin , CHEN, Xiaoshu
- Applicant: LAM RESEARCH CORPORATION , GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Applicant Address: 4650 Cushing Parkway Fremont, California 94538 US
- Assignee: LAM RESEARCH CORPORATION,GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Current Assignee: LAM RESEARCH CORPORATION,GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Current Assignee Address: 4650 Cushing Parkway Fremont, California 94538 US
- Agency: BERGIN, Denise S. et al.
- Priority: US62/712,866 20180731
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/67 ; G03F7/20 ; G01N23/04 ; G01N21/95
Abstract:
Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis - SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.
Information query
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