The present invention concerns a method for determining the junction temperature of a power semiconductor using a temperature sensitive electrical parameter of a thermal sensitive electrical device in a system comprising the thermal sensitive electrical device, an external electrical circuit, a compensation module and a measurement module. The compensation module is composed at least of a first and a second switches. The invention: -puts the first switch in a closing state and puts the second switch in an opening state during a first period of time in order to measure a first set of voltages, -changes the state of the first switch and/or the state of the second switch or the state of at least one another switch during at least one another period of time in order to measure at least one another voltage, -determines a value of the temperature sensitive parameter using the measured voltages.