-
1.发明公开
公开(公告)号：EP3624441A1
公开(公告)日：2020-03-18
申请号：EP18798985.0
申请日：2018-05-07
申请人： Brillnics Inc.
发明人： OTAKA, Toshinori
IPC分类号： H04N5/3745 , H04N5/353 , H04N5/369
摘要： In a solid-state imaging device 10, a signal retaining part 212 is provided with a first sampling part 2122 and a second sampling part 2123, each of which is formed by one sampling transistor (1T) and one sampling capacitor (1C). The coupling node between the two sampling parts is a retaining node ND23, which is used as a bidirectional port. With such a configuration, the solid-state imaging device 10 is configured as a solid-state imaging element having a global shutter function that achieves substantially the same signal amplitude as in the differential reading scheme with four transistors. Thus, the solid-state imaging device 10 can achieve the reduced increase in number of transistors, prevent the occurrence of signal amplitude loss in the sampling parts, maintain high pixel sensitivity and reduce input conversion noise.
-
2.发明公开
公开(公告)号：EP3598501A2
公开(公告)日：2020-01-22
申请号：EP19186765.4
申请日：2019-07-17
IPC分类号： H01L27/146
摘要： One object of the present invention is to provide a solid-state imaging device, a method for fabricating a solid-state imaging device, and an electronic apparatus that implement both a wide dynamic range and a high sensitivity. A storage capacitor serving as a storage capacitance element includes a first electrode and a second electrode on a second substrate surface side. The first electrode is formed of a p+ region (the second conductivity type semiconductor region) formed in the surface of a second substrate surface of a substrate, and the second electrode is formed above the second substrate surface so as to be opposed at a distance to the first electrode in the direction perpendicular to the substrate surface. The first electrode and the second electrode are arranged so as to spatially overlap with a photoelectric conversion part in the direction perpendicular to the substrate surface.
-
3.发明公开
公开(公告)号：EP3493261A3
公开(公告)日：2019-07-24
申请号：EP18209505.9
申请日：2018-11-30
申请人： Brillnics Inc.
IPC分类号： H01L27/146 , H04N5/33 , H04N9/04
摘要： One object is to provide a solid-state imaging device (10) that can capture visible light images such as RGB images and infrared images such as NIR images and maintain a high light-receiving sensitivity for infrared light, a method of driving such a solid-state imaging device (10), and an electronic apparatus (100). The solid-state imaging device (10) includes: a pixel part (20) having unit pixel groups (200) arranged therein, the unit pixel groups (200) each including a plurality of pixels (PXL11, PXL12, PXL21, PXL22) at least for visible light that perform photoelectric conversion; and a reading part (70) for reading pixel signals from the pixel part (20), wherein the plurality of pixels for visible light have a light-receiving sensitivity for infrared light, and in an infrared reading mode, the reading part (70) is capable of adding together signals for infrared light read from the plurality of pixels for visible light.
-
4.发明公开
公开(公告)号：EP3681148A1
公开(公告)日：2020-07-15
申请号：EP20151185.4
申请日：2020-01-10
申请人： Brillnics Inc.
发明人： Otaka, Toshinori
IPC分类号： H04N5/3745 , H04N5/369
摘要： Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus. A memory part 230 is formed using an SRAM 231 serving as an ADC memory, and an ADC code is written into and read from the memory part 230 under control of a reading part 60. In the SRAM 231, a power gating transistor is additionally provided to both of a power supply node (between a power supply and a virtual power supply node) and a ground node (between a virtual reference potential node and a reference potential) for the purposes of blocking the shoot-through currents from the bit cells during the writing operation. The power gating transistors are controlled by the reading part 60 so as to operate as either a weak current source or switch.
-
5.发明公开
公开(公告)号：EP3611918A1
公开(公告)日：2020-02-19
申请号：EP18783757.0
申请日：2018-04-11
申请人： Brillnics Inc.
发明人： MORI, Kazuya , OKURA, Shunsuke , TAKAYANAGI, Isao
IPC分类号： H04N5/3745 , H01L27/146
摘要： In a solid-state imaging device 10, the first binning switch 81 is formed such that a MOS capacitance and a wire capacitance of a wire connected to the binning switch 81, each having a value in accordance with an ON or OFF state, are added to a capacitance of a floating diffusion FD of a pixel PXL to be read, so as to optimize the capacitance of the floating diffusion FD and optimally adjust a conversion gain in accordance with a mode. This operation increases an image quality.
-
6.发明公开
公开(公告)号：EP3598501A3
公开(公告)日：2020-01-29
申请号：EP19186765.4
申请日：2019-07-17
IPC分类号： H01L27/146 , H04N5/335
摘要： One object of the present invention is to provide a solid-state imaging device, a method for fabricating a solid-state imaging device, and an electronic apparatus that implement both a wide dynamic range and a high sensitivity. A storage capacitor serving as a storage capacitance element includes a first electrode and a second electrode on a second substrate surface side. The first electrode is formed of a p+ region (the second conductivity type semiconductor region) formed in the surface of a second substrate surface of a substrate, and the second electrode is formed above the second substrate surface so as to be opposed at a distance to the first electrode in the direction perpendicular to the substrate surface. The first electrode and the second electrode are arranged so as to spatially overlap with a photoelectric conversion part in the direction perpendicular to the substrate surface.
-
7.发明公开
公开(公告)号：EP3684050A1
公开(公告)日：2020-07-22
申请号：EP20152113.5
申请日：2020-01-16
申请人： Brillnics Inc.
发明人： Okura, Shunsuke
IPC分类号： H04N5/355 , H04N5/3745 , H03F3/45
摘要： One object is to provide a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of removing a noise gap at a connection point between the low conversion gain data and the high conversion gain data, suppressing increase of power consumption and circuit areas, providing a wide dynamic range, and thus achieving high image quality. An amplifying part for amplifying a plurality of pixel signals read out from a pixel includes an amplifier. The amplifier includes an inverting input terminal and a noninverting input terminal. The inverting input terminal includes a first inverting input channel and a second inverting input channel. The first inverting input channel is connected to a second node, and the second inverting input channel is connected to a third node. A capacitance of a second sampling capacitor is 8C, and a capacitance of a first sampling capacitor is C.
-
公开(公告)号：EP3606047A3
公开(公告)日：2020-05-13
申请号：EP19189029.2
申请日：2019-07-30
申请人： Brillnics Inc.
发明人： Goto, Miku
摘要： Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of achieving low power consumption with a simpler circuit and a smaller area, and capable of realizing high-speed charging. A voltage supply part 320 includes an external capacitor Cext31 in which a first electrode EL31 is connected to a first node ND31 and a second electrode EL32 is connected to a second node ND32, a first switch SW31 connected between a first power-source potential vaa and the first node ND31, a second switch SW32 connected between a second power-source potential vgnd and the second node ND32, and a third switch SW33 connected between the first power-source potential vaa and the second node ND32, and the first node ND31 is connected to a first power-source voltage terminal TVAA of a row driver 310.
-
公开(公告)号：EP3606047A2
公开(公告)日：2020-02-05
申请号：EP19189029.2
申请日：2019-07-30
申请人： Brillnics Inc.
发明人： Goto, Miku
摘要： Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of achieving low power consumption with a simpler circuit and a smaller area, and capable of realizing high-speed charging. A voltage supply part 320 includes an external capacitor Cext31 in which a first electrode EL31 is connected to a first node ND31 and a second electrode EL32 is connected to a second node ND32, a first switch SW31 connected between a first power-source potential vaa and the first node ND31, a second switch SW32 connected between a second power-source potential vgnd and the second node ND32, and a third switch SW33 connected between the first power-source potential vaa and the second node ND32, and the first node ND31 is connected to a first power-source voltage terminal TVAA of a row driver 310.
-
10.发明公开
公开(公告)号：EP3799421A1
公开(公告)日：2021-03-31
申请号：EP20198839.1
申请日：2020-09-29
申请人： Brillnics Inc.
发明人： MIYAUCHI, Ken , MORI, Kazuya
IPC分类号： H04N5/355 , H04N5/3745 , H04N5/369
摘要： A pixel 200 includes photoelectric conversion elements PD0, PD1 for generating charges through photoelectric conversion and storing the generated charges in a storing period, transfer elements TG0-Tr, TG1-Tr for transferring the stored charges, an output node FD to which the charges stored in the photoelectric conversion elements are transferred through the transfer elements, an output buffer part 211 for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges, and a comparator 220 for performing a comparing operation of comparing the voltage signal from the output buffer part against a referential voltage and outputting a digital comparison result signal. The comparator 220 performs, under control of a reading part, the comparing operation on read-out signals read in at least two different modes through different sequences of operations for reading performed on charges stored in the different photoelectric conversion elements.
-
-
-
-
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.011 秒)
