公开(公告)号：EP3693995A1

公开(公告)日：2020-08-12

申请号：EP17928063.1

申请日：2017-10-03

申请人： Asahi Kasei Microdevices Corporation

发明人： SAKAMOTO Toshiro ,  TAKEHARA Satoshi ,  YAMAHA Yoshiro ,  KOBAYASHI Makoto

IPC分类号： H01L27/11521

摘要： There is provided a nonvolatile storage element having excellent charge holding characteristics capable of reducing variations in electric characteristics and an analog circuit provided with the same. A nonvolatile storage element M is provided with a charge holding region (21) and an insulator (20) surrounding the entire surface of the charge holding region (21) and having halogen distributed in at least one part of a region surrounding the entire surface.