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公开(公告)号：EP3390697A1
公开(公告)日：2018-10-24
申请号：EP16809829.1
申请日：2016-12-14
发明人： VEIRMAN, Jordi , ALBARIC, Mickaël , STADLER, Jacky
摘要： The invention relates to a furnace for crystallizing an ingot (14) made of semiconductor material, this furnace comprising: - a crucible (11) having an axis of symmetry (z) and intended to contain a bath (10) of molten semiconductor material; - a system (36) for pulling the ingot from the bath of molten semiconductor material, in a direction collinear with the axis of symmetry (z) of the crucible (11); - a part (12) formed of an oxygen-containing material, said part (12) comprising at least one segment of a ring, having an axis collinear with the axis of symmetry (z) of the crucible (11), the crucible (11) and the part (12) being mounted so as to be able to carry out a relative translational movement parallel to the axis of symmetry (z) of the crucible; and - a heat shield (38) positioned around the axis of symmetry (z) of the crucible (11) and mounted so as to be able to move in translation parallel to the axis of symmetry of the crucible by means of a translation system. The part (12) is fastened to the translation system of the heat shield (38).
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公开(公告)号：EP3390697B1
公开(公告)日：2020-07-29
申请号：EP16809829.1
申请日：2016-12-14
发明人： VEIRMAN, Jordi , ALBARIC, Mickaël , STADLER, Jacky
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3.发明公开
公开(公告)号：EP3390699A1
公开(公告)日：2018-10-24
申请号：EP16819040.3
申请日：2016-12-14
CPC分类号： C30B29/06 , C30B15/04 , C30B15/206
摘要： The invention relates to a method for manufacturing ingots made of a semi-conductive material, including the following steps: crystallising under specific draft conditions a first ingot, referred to as the reference ingot, from a first molten load containing oxygen; measuring the interstitial oxygen concentration in various regions distributed along the reference ingot; measuring, in the various regions of the reference ingot, the concentration of thermal donors formed during the crystallisation of the reference ingot; determining the actual durations of an annealing process for forming the thermal donors, undergone by the various regions of the reference ingot during the crystallisation thereof, from the measurements of the interstitial oxygen concentration and the concentration of thermal donors; calculating the thermal donor concentration values to be obtained so that a second ingot has, after crystallisation, an axial electric resistivity according to a target profile; determining an axial profile of interstitial oxygen concentration corresponding to the target axial resistivity profile, from the thermal donor concentration values and the actual durations of the annealing process for forming the thermal donors; crystallising under said specific draft conditions the second ingot from a second molten load containing oxygen, the oxygen concentration of the second molten load being adjusted throughout the crystallisation so as to obtain, in the second ingot, the axial profile of interstitial oxygen concentration.
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