摘要:
The carburized component of the present inventions is characterized by having a base metal containing: C: 0.10% to 0.40%; Si: 0.05% to 0.8%; Mn: 0.35% to 1.2%; Cr: 2.0% to 6.0%; and remnant including Fe and inevitable impurities, having a carburized layer formed on a surface layer portion of said base metal, having a grain boundary oxidized layer depth of 1µm or less on a surface thereof and an average C concentration SC of 1. 5% to 4. 0% at 25µm deep from the surface, and adjusted so as to satisfy: 1.76SC-1.06 said carburized layer also has a carbide area ratio of 15% to 60% at 25µm deep from the surface, an fine carbide area ratio, having a dimension of 0.5µm to 10µm, constitutes 80% or more of the total, and further 70% by volume or more of said fine carbide is M 3 C type.