利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.01 秒)

    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    2.
    发明公开
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 审中-公开
    成形过程的栅电极上的硅晶片的前

    公开(公告)号：EP2433305A1

    公开(公告)日：2012-03-28

    申请号：EP10722878.5

    申请日：2010-05-20

    申请人： E. I. du Pont de Nemours and Company

    发明人： ANDERSON, David Kent ,  ANDERSON, Russell David ,  LAUDISIO, Giovanna ,  LIN, Cheng-Nan ,  KAO, Shih-Ming ,  WU, Chun-Kwei

    IPC分类号： H01L31/0224 ,  H01B1/16

    CPC分类号： H01B1/16 ,  H01B1/22 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer in a grid pattern which comprises (i) thin parallel finger lines forming a bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines to form a top set of finger lines superimposing the bottom set of finger lines, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    3.
    发明公开
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 审中-公开
    在硅晶片的正面上形成栅极电极的过程

    公开(公告)号：EP2433306A1

    公开(公告)日：2012-03-28

    申请号：EP10722879.3

    申请日：2010-05-20

    申请人： E. I. du Pont de Nemours and Company

    发明人： ANDERSON, David, Kent ,  ANDERSON, Russell, David ,  HANG, Kenneth, Warren ,  KAO, Shih-Ming ,  LAUDISIO, Giovanna ,  LIN, Cheng-Nan ,  WU, Chun-Kwei

    IPC分类号： H01L31/0224 ,  H01B1/16

    CPC分类号： H01L31/022425 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines forming a top set of finger lines superimposing the bottom set of finger lines, (3) printing and drying a metal paste C comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit to form busbars intersecting the finger lines at right angle, and (4) firing the triple-printed silicon wafer, wherein the inorganic content of metal paste B as well as that of paste C contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前格栅电极的方法，包括以下步骤：（1）印刷和干燥金属浆料A，所述金属浆料A包含含0.5-8重量％玻璃料的无机成分并具有火焰 其中金属浆料A被印刷在ARC层上以形成底部的一组细平行指状线，（2）印刷和干燥金属浆料B，所述金属浆料B包含含有0至3重量％的玻璃 （3）印刷和干燥包含0.2至3重量％的玻璃料的无机成分的金属糊C以形成底部指纹线集合，以形成叠加底部指纹集的顶部指纹集 （4）焙烧三重印刷硅晶片，其中金属浆料B的无机含量以及浆料C的无机含量包含较少的玻璃料加上可选地存在的除无机成分之外的其它无机添加剂 的金属膏 一个。