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公开(公告)号:EP0353039B1
公开(公告)日:1994-01-05
申请号:EP89307579.6
申请日:1989-07-25
IPC分类号: G01R19/165 , G01R17/06 , G05F1/573
CPC分类号: G01R17/06 , G01R19/16519 , G05F3/24
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公开(公告)号:EP0353039A1
公开(公告)日:1990-01-31
申请号:EP89307579.6
申请日:1989-07-25
IPC分类号: G01R19/165 , G01R17/06 , G05F1/573
CPC分类号: G01R17/06 , G01R19/16519 , G05F3/24
摘要: A current sensing circuit includes a first reference resistor (Rp) connected in series with the source-drain path of a current mirroring transistor (T2) across the source-drain path of a power transistor (T1) which is N times the size of the current mirroring transistor. Due to the first reference resistor (Rp), the current in the mirroring transistor is less than 1/N the current in the power transistor. To sense the current in the power transistor more accurately, the current sensing circuitry includes a reference circuit (22) in which the source-drain path of a compensating transistor (T3), of like size as the current mirroring transistor (T2), is connected in parallel with a second reference resistor (RR) to produce a reference current (IR) which is approximately equal to 1/N the current flowing in the power transistor (T1).
摘要翻译: 电流检测电路包括与功率晶体管(T1)的源极 - 漏极路径跨过电流镜像晶体管(T2)的源极 - 漏极路径串联连接的第一参考电阻器(Rp),该功率晶体管(T1)的尺寸为N倍 电流镜像晶体管。 由于第一个参考电阻(Rp),镜像晶体管中的电流小于功率晶体管中的电流的1 / N。 为了更精确地感测功率晶体管中的电流,电流感测电路包括参考电路(22),其中与电流镜像晶体管(T2)类似尺寸的补偿晶体管(T3)的源极 - 漏极路径是 与第二参考电阻器(RR)并联连接以产生大约等于在功率晶体管(T1)中流动的电流的1 / N的参考电流(IR)。
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