公开(公告)号：EP0741406A2

公开(公告)日：1996-11-06

申请号：EP96106731.1

申请日：1996-04-29

申请人： MOTOROLA, INC.

发明人： Bukhman, Yefim ,  Keller, Edward M.

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065

摘要： A scaleable laser and control unit (58) is used to differentially heat portions of a semiconductor substrate (40) during downstream etching. Such differential heating provides a differential etch rate for each portion heated resulting in improved uniformity and reduced etch induced surface damage. An etching chamber (50) capable of containing the downstream plasma and providing a direct line of sight between the substrate (40) and the scanable laser unit (58) is provided. In addition, the system provides for dynamic updating of the process by in situ etch rate and temperature measurements.

摘要翻译： 在下游蚀刻期间，使用可扩展的激光和控制单元（58）来差别地加热半导体衬底（40）的部分。 这种差分加热为加热的每个部分提供差别蚀刻速率，导致改进的均匀性和减少的蚀刻诱发的表面损伤。 提供能够容纳下游等离子体并在基板（40）和可扫描激光单元（58）之间提供直接视线的蚀刻室（50）。 此外，该系统通过原位蚀刻速率和温度测量提供了对过程的动态更新。

公开(公告)号：EP0741406A3

公开(公告)日：1999-01-13

申请号：EP96106731.1

申请日：1996-04-29

申请人： MOTOROLA, INC.

发明人： Bukhman, Yefim ,  Keller, Edward M.

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065

摘要： A scaleable laser and control unit (58) is used to differentially heat portions of a semiconductor substrate (40) during downstream etching. Such differential heating provides a differential etch rate for each portion heated resulting in improved uniformity and reduced etch induced surface damage. An etching chamber (50) capable of containing the downstream plasma and providing a direct line of sight between the substrate (40) and the scanable laser unit (58) is provided. In addition, the system provides for dynamic updating of the process by in situ etch rate and temperature measurements.

公开(公告)号：EP0524741A1

公开(公告)日：1993-01-27

申请号：EP92306211.1

申请日：1992-07-07

申请人： MOTOROLA, INC.

发明人： Bukhman, Yefim ,  Keller, Edward M.

IPC分类号： G03F1/14

CPC分类号： G03F1/29

摘要： A phase shift mask (24) used for manufacturing semiconductor devices includes a pattern layer (26) that contains the predetermined pattern of a desired semiconductor feature which is formed in a plurality of apertures in the pattern layer (26). A conformal coating (27) is applied to the mask (24) to create a phase shift region (31, 36, 37) within a predetermined distance (29) of each aperture in the pattern layer (26). The conformal coating (27) forms two regions (31, 36, 37) (32) having different thicknesses. The phase of light passing through the thicker or phase shift region (31, 36, 37) is shifted relative to light passing through the thin region (32).

摘要翻译： 用于制造半导体器件的相移掩模（24）包括做了图案层（26）包含所需的所有的半导体特性，它在孔径的在所述图案层（26）形成的多个的预定图案。 保形涂层（27）施加到所述掩模（24）在所述图案层（26），每个孔的预定距离（29）内产生的相移区域（31，36，37）。 该保角涂层（27）形成具有不同厚度的两个区域（31，36，37）（32）。 光穿过更厚或相移区的相（31，36，37）相对于光穿过薄区域（32）移位。