公开(公告)号：EP0793279A3

公开(公告)日：1998-08-12

申请号：EP97103258

申请日：1997-02-27

申请人： NIPPON TELEGRAPH & TELEPHONE

发明人： KATO KAZUTOSHI ,  MURAMOTO YOSHIFUMI ,  NAKAJIMA OSAAKE

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/103 ,  G02B6/00

CPC分类号： H01L31/1035 ,  G02B6/12004 ,  G02B6/42 ,  G02B2006/12123 ,  G02B2006/12126

摘要： This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the first layer. The first semiconductor layer is arranged on the side of the first layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. The second semiconductor layer is arranged on the side of the second layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. When a predetermined reverse bias voltage is applied between the first and second semiconductor layers, the first layer is entirely depleted and the second layer is partially depleted.