公开(公告)号：EP1574602A1

公开(公告)日：2005-09-14

申请号：EP03748696.6

申请日：2003-10-03

申请人： Nikko Materials Co., Ltd.

发明人： ASAHI, Toshiaki, NIKKO MATERIALS CO LTD TODA PLANT ,  SATO, Kenji, NIKKO MATERIALS CO LTD TODA PLANT ,  YABE, Takayuki, NIKKO MATERIALS CO LTD TODA PLANT ,  ARAKAWA, Atsutoshi, NIKKO MATERIALS CO LTD ISOHARA

IPC分类号： C30B15/12 ,  C30B29/48

CPC分类号： C30B27/02 ,  C30B15/12 ,  C30B29/48 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

摘要翻译： 在使用具有双坩埚结构的晶体生长装置的LEC方法制造化合物半导体单晶的制造方法中，通过用具有通孔的板状部件覆盖第二坩埚而使晶体长大， 为了能够将具有晶种保持部的晶体提升轴引入第二坩埚，并产生第二坩埚内的气氛几乎不变化（半密封结构）的状态。