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    CURRENT MIRROR WITH SATURATED SEMICONDUCTOR RESISTOR
    3.
    发明公开
    CURRENT MIRROR WITH SATURATED SEMICONDUCTOR RESISTOR 审中-公开
    电动式后视镜用饱和半导体电阻

    公开(公告)号：EP2936263A1

    公开(公告)日：2015-10-28

    申请号：EP13798518.0

    申请日：2013-11-19

    申请人： Raytheon Company

    发明人： BETTENCOURT, John, P. ,  DECARO, Frank, J. ,  TREMBLAY, John, C.

    IPC分类号： G05F3/16 ,  G05F3/26 ,  H03F3/193 ,  H03K19/094

    CPC分类号： G05F3/26 ,  G05F3/16 ,  G05F3/262 ,  H03F1/00 ,  H03F1/301 ,  H03F3/195 ,  H03F2200/18 ,  H03F2200/555

    摘要： A current mirror circuit having formed in a semiconductor: a pair of transistors arranged to produce an output current through an output one of the transistors proportional to a reference current fed to an input one of the pair of transistors; a resistor comprising a pair of spaced electrodes in ohmic contact with the semiconductor, one of such pair of electrodes of the resistor being coupled to the input one of the pair of transistors; and circuitry for producing a voltage across the pair of electrodes of the resistor, such circuitry placing the resistor into saturation producing current through a region in the semiconductor between the pair of spaced ohmic contacts, such produced current being fed to the input one of the transistors as the reference current for the current mirror.

    RADIO FREQUENCY LIMITER CIRCUIT
    5.
    发明公开
    RADIO FREQUENCY LIMITER CIRCUIT 有权
    RF限制器

    公开(公告)号：EP1618653A1

    公开(公告)日：2006-01-25

    申请号：EP04759822.2

    申请日：2004-04-09

    申请人： RAYTHEON COMPANY

    发明人： ADLERSTEIN, Michael, G. ,  TREMBLAY, John, C.

    IPC分类号： H03F3/60 ,  H03F1/52

    CPC分类号： H03G11/04 ,  H03F1/523 ,  H03F3/601 ,  H03F2200/211 ,  H03F2200/258

    摘要： A limiter circuit includes a rectification circuit coupled to an input of the limiter circuit. The rectification circuit produces a voltage having a predetermined average level. The level is a function of an input signal fed to the input of the limiter circuit. A voltage divider circuit is coupled to the rectification circuit for producing an output voltage having a level proportional to the input signal. An enhancement mode field effect transistor has a gate electrode fed by the output voltage produced by the voltage divider circuit. The transistor has drain and source electrodes coupled to an output of the limiter circuit and a reference potential, respectively. A transmission line is coupled between the input of the limiter and the output of the limiter circuit. The transmission line has an electrical length nlambda/4, where lambda is the nominal operating wavelength of the limiter circuit and n is an odd integer. The use of an enhancement mode transistor with a positive gate threshold for conduction, greatly simplifies the limiter circuit compared with conventional designs using depletion mode transistors.