公开(公告)号：EP4426082A1

公开(公告)日：2024-09-04

申请号：EP24158579.3

申请日：2024-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Hyunjung ,  PARK, Sejun ,  LEE, Jaeduk ,  JUNG, Eiwhan

IPC: H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H10B43/35 ,  H10B43/27 ,  H10B41/35 ,  H10B41/27

Abstract: A semiconductor device includes a first semiconductor structure (PERI; S1) including a substrate (201), circuit devices (220) on the substrate (201), and circuit interconnection lines (280) on the circuit devices (220); and a second semiconductor structure (CELL; S2) on the first semiconductor structure (PERI; S1) and having a first region (R1) and a second region (R2), wherein the second semiconductor structure (CELL; S2) includes gate electrodes (130); first channel structures (CH) in the first region (R1); second channel structures (SCH) in the first region (R1); and contact plugs (170) in the second region (R2), the gate electrodes (130) include first gate electrodes (130U2, 130U1, 130M, 130D2, 130L1, 130L2) having a first thickness in the vertical direction (Z) in the first region (R1) and second gate electrodes (130U1_1, 130U1_2, 130U1_3) having a second thickness (T3) in the vertical direction (Z) greater than the first thickness in the first region (R1), and the second gate electrodes (130U1_1, 130U1_2, 130U1_3) are commonly connected to one of the contact plugs (170).