公开(公告)号：EP4336545A1

公开(公告)日：2024-03-13

申请号：EP23185154.4

申请日：2023-07-13

申请人： GlobalFoundries U.S. Inc.

发明人： ABOU-KHALIL, Michel ,  SHANK, Steven M. ,  MCTAGGART, Sarah ,  VALLETT, Aaron ,  KRISHNASAMY, Rajendran ,  LYDON-NUHFER, Megan

IPC分类号： H01L21/76 ,  H01L27/04 ,  H01L29/10 ,  H01L21/762 ,  H01L21/763

摘要： Semiconductor device structures with device isolation and methods of forming a semiconductor device structure with device isolation. The structure comprises a semiconductor substrate, a first semiconductor layer on the semiconductor substrate, a second semiconductor layer in a cavity in the first semiconductor layer, and a device structure including a doped region in the second semiconductor layer. The first semiconductor layer comprises a porous semiconductor material, and the second semiconductor layer comprises a single-crystal semiconductor material.