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公开(公告)号:EP4150797A1
公开(公告)日:2023-03-22
申请号:EP21726463.9
申请日:2021-05-12
发明人: KONG, Meiwei , OOI, Boon S. , NG, Tien Khee
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公开(公告)号:EP4150793A1
公开(公告)日:2023-03-22
申请号:EP21726199.9
申请日:2021-05-11
发明人: KONG, Meiwei , OOI, Boon S. , NG, Tien Khee
IPC分类号: H04B10/116 , H01L31/04 , H04B10/114
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公开(公告)号:EP3900223A1
公开(公告)日:2021-10-27
申请号:EP19816895.7
申请日:2019-11-26
发明人: OOI, Boon S. , KANG, Chun Hong , NG, Tien Khee , BAKR, Osman M. , DURSUN, Ibrahim , SINATRA, Lutfan , LUTFULLIN, Marat
IPC分类号: H04B10/116 , H04B10/572
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14.
公开(公告)号:EP3491677A1
公开(公告)日:2019-06-05
申请号:EP17758623.7
申请日:2017-07-25
IPC分类号: H01L33/44 , C01B3/04 , C25B1/00 , H01L31/0216
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15.
公开(公告)号:EP3886186A1
公开(公告)日:2021-09-29
申请号:EP21174179.8
申请日:2017-12-28
摘要: A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.
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公开(公告)号:EP3545591A1
公开(公告)日:2019-10-02
申请号:EP17817155.9
申请日:2017-11-28
发明人: OOI, Boon Siew , SHEN, Chao , NG, Tien Khee
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公开(公告)号:EP3510638A1
公开(公告)日:2019-07-17
申请号:EP17778340.4
申请日:2017-09-06
发明人: OOI, Boon S. , HUSSEIN, Mohamed Ebaid Abdrabou , PRABASWARA, Aditya , NG, Tien Khee , MIN, Jungwook
IPC分类号: H01L31/0352 , H01L31/0224 , H01L31/0304 , H01L31/08 , C25B1/06 , C01B3/04 , H01G9/20
摘要: Embodiments describe a photoelectrode including a first III-nitride nanowire layer, a transparent substrate in contact with the first nanowire layer at a first substrate surface and a second III-nitride nanowire layer in contact with the substrate at a second substrate surface, substantially opposite the first substrate surface.
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公开(公告)号:EP3509984A1
公开(公告)日:2019-07-17
申请号:EP17780523.1
申请日:2017-09-08
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