公开(公告)号：EP1519419A2

公开(公告)日：2005-03-30

申请号：EP04022463.6

申请日：2004-09-21

申请人： NISSAN MOTOR CO., LTD.

发明人： Hayashi, Tetsuya ,  Tanaka, Hideaki ,  Hoshi, Masakatsu ,  Kaneko, Saichirou

IPC分类号： H01L29/78 ,  H01L29/267 ,  H01L29/24 ,  H01L21/04

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7828

摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which forms a heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region between and in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.

摘要翻译： 本发明的一个方面提供了一种半导体器件，其包括第一导电类型半导体本体，与半导体本体接触的源极区，其带隙与半导体本体的带隙不同，并且与半导体本体形成异质结， 与源极区域和半导体本体之间的接合部分接触的栅极绝缘膜，与栅极绝缘膜接触的栅极电极，源极电极，与源极电极和源极接触的低电阻区域 并且与源电极欧姆连接，以及与半导体本体欧姆连接的漏电极。