DISPLAY DEVICE
    38.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:EP4099384A1

    公开(公告)日:2022-12-07

    申请号:EP22186748.4

    申请日:2021-06-09

    摘要: Provided herein is a display device. The display device may include a substrate (SUB), a first circuit part (PCL1) and a second circuit part (PCL2) each provided on the substrate and spaced apart from each other in a first direction (DR1), and an emission part (DPL) disposed between the first circuit part and the second circuit part and provided horizontally with the first circuit part (PCL1) and the second circuit part (PCL2). The first circuit part may include a first electrode (RFE1) extending to the emission part (DPL). The second circuit part may include a second electrode (RFE2) extending to the emission part. The emission part may include a light emitting element (LD) disposed between the first electrode and the second electrode.

    LIGHTING DEVICE AND METHOD FOR MANUFACTURING LIGHTING DEVICE

    公开(公告)号:EP4089747A1

    公开(公告)日:2022-11-16

    申请号:EP22183296.7

    申请日:2020-02-11

    IPC分类号: H01L33/44

    摘要: A lighting device (100) of includes a substrate (110), a light emitting unit (130) and a light adjusting layer (140). The light emitting unit (130) is disposed on the substrate (110), and the light emitting unit (130) includes a light output surface (130s). The light adjusting layer (140) is disposed on the light emitting unit (130), and the light adjusting layer (140) includes a first portion (142) and a second portion (144) connected to the first portion (142). The first portion (142) only partially covers the light output surface (130s), and the second portion (144) does not cover the light output surface (130s).

    LIGHT-EMITTING DIODE CHIP STRUCTURE
    40.
    发明公开

    公开(公告)号:EP4089745A1

    公开(公告)日:2022-11-16

    申请号:EP21173205.2

    申请日:2021-05-11

    IPC分类号: H01L33/38 H01L33/44 H01L33/40

    摘要: A light-emitting diode chip structure comprising a substrate (10); a metal contact layer (20) disposed on the substrate (10); a light-emitting semiconductor layer (30) disposed on the metal contact layer (20); an insulating protective layer (40) covering the metal contact layer (20) and the light-emitting diode semiconductor layer. The insulating protective layer (40) includes a first opening (41) that exposes the light-emitting semiconductor layer (30) and a second opening (42) that exposes the metal contact layer (20). The metal conductive layer (50) with one end passing through the first opening (41) to be electrically connected to the light-emitting semiconductor layer (30), and the other end of the metal conductive layer (50) extended on the insulating protective layer (40). A first electrode pad (60) and a second electrode pad (70) are respectively located on lateral sides of the light-emitting semiconductor layer (30) and respectively disposed on the metal conductive layer (50) and passing through the second opening (42) to be disposed on the metal contact layer (20).