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公开(公告)号：EP3384594A1
公开(公告)日：2018-10-10
申请号：EP16806041.6
申请日：2016-12-01
CPC分类号： H02S50/00 , H02H1/0015 , H02H1/0092 , H02H7/20 , H02S50/15
摘要： The invention relates to a method including the steps of measuring (EO) an electric current signal produced by the apparatus (100) at a sampling rate no lower than 50 kHz, and, from the measured current signal, determining (E3) an initial value (l
0 ) of the current before the occurrence of an electric arc, determining (E5) current values (l
arcj ) during the electric arc, evaluating (E6) arc voltage values from the current values determined during the arc and from the initial value of the current, integrating (E7) over time the product of the arc voltage values evaluated by the determined current values, in order to determine the energy of the arc.-
42.发明公开
公开(公告)号：EP3384593A1
公开(公告)日：2018-10-10
申请号：EP16806040.8
申请日：2016-12-01
摘要： The photovoltaic installation comprising at least one photovoltaic module (1) and an electromechanical part capable of producing a non-parasitic electric arc of a duration less than or equal to a given arc extinction duration (X) when contacts in said part are opened, the method comprises the steps of detecting (E0) the appearance of an electric arc in a photovoltaic installation; triggering (E1) a timer to start timing from the moment (T0) of appearance of the electric arc; measuring (E3) at least one of the electric quantities of the group including a voltage (V
m ) of the at least one photovoltaic module and a current (I) produced by the installation at the end of the arc extinction duration starting from the moment (T0) of appearance of the arc; comparative testing (E4; E5) in order to determine whether the measured electric quantity is equal to an open-circuit voltage (V
OC ) of the photovoltaic module or to a zero current; and, if the test is negative, identifying a parasitic electric arc.-
43.发明公开
公开(公告)号：EP2893058A1
公开(公告)日：2015-07-15
申请号：EP13774828.1
申请日：2013-09-03
发明人： GARANDET, Jean-Paul , CHAINTREUIL, Nicolas , FASIELLO, Annalaura , PILAT, Eric , VESCHETTI, Yannick
IPC分类号： C30B15/04 , C30B29/06 , H01J31/14 , H01J31/18 , H01L31/042
CPC分类号： H01L31/047 , C30B15/04 , C30B29/06 , H01L31/0288 , H01L31/03529 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L31/1876 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath (100) including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers (101) and p-doped silicon layers (102); and (iii) cutting a slice (104), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer (10).
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44.发明授权PILOTAGE DE SYSTEMES DYNAMIQUES PAR MESURE DE TENSION A VIDE D'UN GENERATEUR PHOTOVOLTAÏQUE 有权STEUERUNG DYNAMISCHER SYSTEME DURCH MESSUNG DER LEERLAUFSPANNUNG EINES PHOTOVOLTAIK-GENERATORS
公开(公告)号：EP2636119B1
公开(公告)日：2014-12-10
申请号：EP11832138.9
申请日：2011-10-28
CPC分类号： H02J1/00 , E06B9/11 , E06B9/68 , E06B2009/6854 , H02J7/35 , H02S40/38 , Y02E10/566 , Y10T307/718 , Y10T307/858
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公开(公告)号：EP2368128B1
公开(公告)日：2014-02-19
申请号：EP09793551.4
申请日：2009-12-21
IPC分类号： G01R31/12 , H01L31/042
CPC分类号： G01R31/1209 , G01R31/28 , H01L31/02021 , H02H1/0015 , H02H7/20 , Y02E10/50
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