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71 条记录 (耗时 0.031 秒)

    THERMALLY-ASSISTED COLD-WELD BONDING FOR EPITAXIAL LIFT-OFF PROCESS
    41.
    发明公开
    THERMALLY-ASSISTED COLD-WELD BONDING FOR EPITAXIAL LIFT-OFF PROCESS 审中-公开
    热辅助冷汗并列外延剥离

    公开(公告)号：EP3069388A1

    公开(公告)日：2016-09-21

    申请号：EP14866795.9

    申请日：2014-11-11

    申请人： The Regents Of The University Of Michigan

    发明人： FORREST, Stephen, R. ,  LEE, Kyusang

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1864 ,  H01L31/02327 ,  H01L31/18 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/50

    摘要： A process for assembling a thin-film optoelectronic device is disclosed. The process may include providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region. The process may further include providing a host substrate and depositing a first metal layer on the device region and depositing a second metal layer on the host substrate. The process may further include bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate.

    HYBRID PLANAR-GRADED HETEROJUNCTION FOR ORGANIC PHOTOVOLTAICS
    43.
    发明公开
    HYBRID PLANAR-GRADED HETEROJUNCTION FOR ORGANIC PHOTOVOLTAICS 审中-公开
    混合平板刨花机HETEROÜBERGANGFÜRORGANISCHE FOTOVOLTAIK

    公开(公告)号：EP2926387A1

    公开(公告)日：2015-10-07

    申请号：EP13802835.2

    申请日：2013-11-27

    申请人： The Regents Of The University Of Michigan

    发明人： FORREST, Stephen, R. ,  ZIMMERMAN, Jeramy, D. ,  XIAO, Xin ,  LASSITER, Brian, E.

    IPC分类号： H01L51/42

    CPC分类号： H01L51/4253 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0078 ,  Y02E10/549

    摘要： Disclosed herein are organic photosensitive optoelectronic devices comprising at least one hybrid planar-graded heterojunction. In particular, organic photosensitive optoelectronic devices are disclosed having two electrodes (110), (150) in superposed relation, a graded heterojunction layer (130) located between the two electrodes, and at least one photoactive layer (120), (140) adjacent to and interfacing with the graded heterojunction layer.

    摘要翻译： 本文公开了包含至少一个混合平面梯度异质结的有机光敏光电器件。 特别地，公开了具有重叠关系的两个电极（110），（150），位于两个电极之间的渐变异质结层（130）和相邻的至少一个光敏层（120），（140）的有机光敏光电子器件 到等离子体异质结层并与之连接。

    HYBRID PLANAR-MIXED HETEROJUNCTION FOR ORGANIC PHOTOVOLTAICS
    44.
    发明公开
    HYBRID PLANAR-MIXED HETEROJUNCTION FOR ORGANIC PHOTOVOLTAICS 审中-公开
    HYBRID，平面混合HETEROFLEXIBLE转换到其他有机光伏

    公开(公告)号：EP2923389A1

    公开(公告)日：2015-09-30

    申请号：EP13802800.6

    申请日：2013-11-22

    申请人： The Regents of The University of Michigan

    发明人： FORREST, Stephen, R. ,  ZIMMERMAN, Jeramy, D. ,  XIAO, Xin

    IPC分类号： H01L51/42 ,  H01L51/00

    CPC分类号： H01L51/4253 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/0072 ,  H01L2251/552 ,  Y02E10/549

    摘要： Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a HOMO energy and at least one acceptor material having a LUMO energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer.

    CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES
    47.
    发明授权
    CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES 有权
    控制生长GREATER HETEROFLEXIBLE链路接口领域有机光敏器件

    公开(公告)号：EP2070131B1

    公开(公告)日：2010-12-15

    申请号：EP07872544.7

    申请日：2007-07-10

    申请人： The Trustees of Princeton University ,  The Regents of the University of Michigan

    发明人： YANG, Fan ,  FORREST, Stephen, R.

    IPC分类号： H01L51/42 ,  H01L51/00

    CPC分类号： H01L51/4246 ,  H01L51/0008 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

    摘要： An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.