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公开(公告)号：EP0210033A1
公开(公告)日：1987-01-28
申请号：EP86305403.7
申请日：1986-07-14
Applicant: SONY CORPORATION
IPC: H01G4/12
CPC classification number: C23C16/405 , H01G4/085 , H01G4/10
Abstract: A high dielectric constant thin film deposited on a substrate can be used to form a capacitor. The thin film is composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of titanium (Ti) to tantalum (Ta) is in the range of 0.1 to 4 atomic percent.
The thin film is deposited on the substrate by chemical vapour deposition, for example using a tantalum alkoxide and a titanium alkoxide.
A thin film of this type has a high dielectric strength as well as a high dielectric constant.
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公开(公告)号：EP0210033B1
公开(公告)日：1992-02-05
申请号：EP86305403.7
申请日：1986-07-14
Applicant: SONY CORPORATION
IPC: H01G4/12
CPC classification number: C23C16/405 , H01G4/085 , H01G4/10
