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公开(公告)号：EP4257658A2
公开(公告)日：2023-10-11
申请号：EP23165828.7
申请日：2023-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： HWANG, Kyuyoung , KANG, Byungjoon , KIM, Daihyun , KIM, Sungmin , KIM, Hwang Suk , PARK, Mihyun , OH, Jungmin , LEE, Hyosan , CHOI, Byoungki
Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.
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公开(公告)号：EP4257659A2
公开(公告)日：2023-10-11
申请号：EP23165831.1
申请日：2023-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： HWANG, Kyuyoung , KANG, Byungjoon , KIM, Daihyun , KIM, Hwang Suk , PARK, Mihyun , OH, Jungmin , LEE, Hyosan , CHOI, Byoungki , HAM, Cheol
Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.
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公开(公告)号：EP4481014A1
公开(公告)日：2024-12-25
申请号：EP24164782.5
申请日：2024-03-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： HWANG, Kyuyoung , KANG, Byungjoon , KIM, Daihyun , KIM, Sungmin , PARK, Mihyun , OH, Jungmin , HAM, Cheol
IPC: C09K13/00 , C23F1/16 , C23F1/26 , C23F3/06 , H01L21/3213
Abstract: An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.
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公开(公告)号：EP4257659A3
公开(公告)日：2024-02-28
申请号：EP23165831.1
申请日：2023-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： HWANG, Kyuyoung , KANG, Byungjoon , KIM, Daihyun , KIM, Hwang Suk , PARK, Mihyun , OH, Jungmin , LEE, Hyosan , CHOI, Byoungki , HAM, Cheol
Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.
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公开(公告)号：EP4257658A3
公开(公告)日：2024-02-28
申请号：EP23165828.7
申请日：2023-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： HWANG, Kyuyoung , KANG, Byungjoon , KIM, Daihyun , KIM, Sungmin , KIM, Hwang Suk , PARK, Mihyun , OH, Jungmin , LEE, Hyosan , CHOI, Byoungki
IPC: C09K13/00 , C23F1/00 , H01L21/3213
Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.
