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公开(公告)号：EP3754704B1
公开(公告)日：2024-07-10
申请号：EP19918521.6
申请日：2019-03-13
IPC: H01L21/768 , H01L23/498 , H01L29/94 , H01G4/33 , H01G4/012 , H01G4/08 , H01G4/10 , H01G4/12 , H01G4/38 , H10N97/00
CPC classification number: H01G4/33 , H01L28/91 , H01L29/945 , H01G4/385 , H01G4/012 , H01G4/08 , H01G4/1272 , H01G4/10 , H01G4/085
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2.发明公开PEROVSKITE MATERIAL WITH ANION-CONTROLLED DIELECTRIC PROPERTIES, THIN FILM CAPACITOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开钙钛矿具有ANIONENGESTEUERTEN介电性能，薄膜电容器装置及其制造方法
公开(公告)号：EP2563720A1
公开(公告)日：2013-03-06
申请号：EP11774497.9
申请日：2011-04-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： KOUTSAROFF, Ivoyl, P. , HIGAI, Shin'ichi , ANDO, Akira
IPC: C01G23/00 , H01L21/316 , H01L21/822 , H01L27/04
CPC classification number: H01G4/085 , C01G23/006 , C01P2002/34 , C01P2002/52 , C01P2002/54 , C01P2006/40 , C23C14/34 , H01B3/10 , H01G4/008 , H01G4/10 , H01G4/33 , H01G7/06 , H01L21/02197 , H01L21/02266 , H01L28/56
Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N
3- anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ΑΒ0
3.δ )
α - (ΑΒ0
3-δ.γ Ν
γ )
1-α . A represents a divalent element, B represents a tetravalent element, y satisfies 0.005 3- anions and the matrix of remaining oxide perovskite material.
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3.发明公开MULTI LAYER CHIP CAPACITOR, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME 审中-公开多层CHIPKOMPENSATOR和方法及装置及其制造
公开(公告)号：EP1913608A1
公开(公告)日：2008-04-23
申请号：EP06768973.7
申请日：2006-06-21
Applicant: SEHYANG INDUSTRIAL CO.,LTD.
Inventor： HA, Jae-Ho
IPC: H01G4/228
CPC classification number: H01G4/06 , H01G4/008 , H01G4/012 , H01G4/085 , H01G4/232 , H01G4/30 , H01G4/306 , H01G13/00 , Y10T29/417 , Y10T29/43 , Y10T29/435 , Y10T29/49144 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178
Abstract: The present invention carries out the vacuum deposition by setting a deposition angle between a single mask set including a shadow mask having a plurality of slits and a deposition source to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once, or adjusts slit patterns by relatively moving upper and lower mask sets that respectively include shadow masks having a plurality of slits and face each other to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once.
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公开(公告)号：EP1005260A3
公开(公告)日：2004-04-07
申请号：EP99309146.1
申请日：1999-11-17
Applicant: MicroCoating Technologies, Inc.
Inventor： Hunt, Andrew Tye , Flanagan, John Scott , Neuman, George Andrew
IPC: H05K1/16 , H01G4/10 , H01G4/08 , C23C16/453
CPC classification number: H05K1/162 , H01G4/085 , H05K3/388 , H05K3/467 , H05K2201/0175 , H05K2201/0179 , H05K2201/0317 , H05K2201/0355 , H05K2201/09309
Abstract: Thin layer capacitors are formed from a first flexible metal layer (402,502), a dielectric layer (404,504) between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer (406,506) deposited on the dielectric layer (404,504). The first flexible metal layer may either be a metal foil (402), such as a copper, aluminum, or nickel foil, or a metal layer (502) deposited on a polymeric support sheet (501). Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.
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5.发明授权Improvements in porous bodies for solid electrolytic capacitors and processes for producing the same 失效用于固体电解电容器的多孔体的改进及其制造方法
公开(公告)号：EP0038149B1
公开(公告)日：1988-07-20
申请号：EP81301450.3
申请日：1981-04-02
Applicant: NEC CORPORATION
Inventor： Shimizu, Shigeaki , Kubo, Yoshimi , Suzuki, Tetsuo , Kizaki, Takashi , Igarashi, Hitoshi
IPC: H01G9/05
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6.发明公开
公开(公告)号：EP4369368A1
公开(公告)日：2024-05-15
申请号：EP22315286.9
申请日：2022-11-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Buffle, Larry , Voiron, Frédéric
IPC: H01G4/10 , H01L29/41 , H01L29/66 , H01L29/94 , H01G4/33 , H01G4/005 , H01G4/012 , H01L21/3213 , H01L21/302 , H01G4/08 , H01L27/02 , H01G4/38 , H01L21/768 , H10N97/00 , H01G4/12
CPC classification number: H01L21/302 , H01L21/3213 , H01L28/90 , H01G4/33 , H01G4/012 , H01G4/385 , H01G4/005 , H01G4/12 , H01G4/085 , H01G4/10 , H01L29/945 , H01L21/76877 , H01L21/76831
Abstract: The present invention relates to an electrical device for high-voltage applications and a method for obtaining an electrical device. The proposed electrical device (100) comprises a capacitor including:
- a bottom electrode (110) comprising a conductive structure, the conductive structure comprising a base surface and facing protruding walls (111) extending upwards and having a highest surface;
- a top electrode (120) comprising at least one conductive region (121) arranged between the facing protruding walls (111) and having a top surface, wherein the top surface of said at least one conductive region (121) lies below or at the level of the highest surface of the protruding walls (111); and
- a dielectric region (130) extending conformally over the bottom electrode (110) and surrounding the top electrode (120), said capacitor being formed by the bottom (110) and top (120) electrodes separated by the dielectric region (130).
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公开(公告)号：EP3244428A3
公开(公告)日：2017-11-29
申请号：EP17169639.6
申请日：2017-05-05
Applicant: Delphi Technologies, Inc. , UChicago Argonne, LLC
Inventor： TAYLOR, Ralph, S , FAIRCHILD, Manuel, Ray , BALACHANDRAN, Uthamalingam , LEE, Tae, H
CPC classification number: H01G4/1218 , C04B35/491 , C04B35/62222 , C04B2235/3227 , H01G4/085 , H01G4/1245 , H01G4/30 , H01G4/33 , H01L28/55
Abstract: A ceramic-capacitor (10) includes a first electrically-conductive-layer (14), a second electrically-conductive-layer (18) arranged proximate to the first electrically-conductive-layer (14), and a dielectric-layer (16) interposed between the first electrically-conductive-layer (14) and the second electrically-conductive-layer (18). The dielectric-layer (16) is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10kHz). A method (20) for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer (16) of a ceramic-capacitor (10), and heating the ceramic-capacitor (10) to a temperature not greater than 300° C.
Abstract translation: 陶瓷电容器（10）包括第一导电层（14），靠近第一导电层（14）布置的第二导电层（18），以及介电层（16） ）介于第一导电层（14）和第二导电层（18）之间。 介电层（16）由铅 - 镧 - 锆 - 钛酸盐材料（PLZT）形成，其中当在25摄氏度和零伏特偏压下测量时，PLZT的特征在于介电常数大于125， 激励频率为一万赫兹（10kHz）。 用于提高铅 - 镧 - 锆 - 钛酸盐材料（PLZT）的介电常数的方法（20）包括以下步骤：沉积PLZT以形成陶瓷电容器（10）的介电层（16） 陶瓷电容器（10）至不高于300℃的温度
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8.发明公开Dielectric composition, dielectric film, and electronic component 有权Dielektrische Zusammensetzung，dielektrischer Film und elektronisches Bauteil
公开(公告)号：EP2871649A1
公开(公告)日：2015-05-13
申请号：EP14192109.8
申请日：2014-11-06
Applicant: TDK Corporation
Inventor： Takeda, Saori , Kaneko, Toshihiko , Yamashita, Yuki , Sezai, Yuji
CPC classification number: C04B35/453 , C04B35/16 , C04B2235/3298 , C04B2235/3427 , C04B2235/604 , C04B2235/6567 , C04B2235/80 , H01G4/085 , H01G4/1209 , H01G4/1272 , H01G4/33 , H01L28/55
Abstract: A dielectric composition containing a crystalline phase represented by a general formula of Bi 12 SiO 20 and a crystalline phase represented by a general formula of Bi 2 SiO 5 as the main components. The dielectric composition contains preferably 5 mass% to 99 mass% of the Bi 2 SiO 5 crystalline phase, and more preferably 30 mass% to 99 mass%.
Abstract translation: 包含由通式Bi 12 SiO 20表示的结晶相和由通式Bi 2 SiO 5表示的结晶相作为主要成分的电介质组合物。 电介质组合物优选含有5质量％〜99质量％的Bi 2 SiO 5结晶相，更优选为30质量％〜99质量％。
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公开(公告)号：EP1005260A2
公开(公告)日：2000-05-31
申请号：EP99309146.1
申请日：1999-11-17
Applicant: MicroCoating Technologies, Inc.
Inventor： Hunt, Andrew Tye , Flanagan, John Scott , Neuman, George Andrew
CPC classification number: H05K1/162 , H01G4/085 , H05K3/388 , H05K3/467 , H05K2201/0175 , H05K2201/0179 , H05K2201/0317 , H05K2201/0355 , H05K2201/09309
Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.
Abstract translation: 薄层电容器由第一柔性金属层，沉积在其上的约0.03和约2微米之间的电介质层和沉积在电介质层上的第二柔性金属层形成。 第一柔性金属层可以是金属箔，例如铜，铝或镍箔，或者沉积在聚合物支撑片上的金属层。 层的沉积是通过燃烧化学气相沉积或受控气氛化学气相沉积而促进或促进的。
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公开(公告)号：EP0210033A1
公开(公告)日：1987-01-28
申请号：EP86305403.7
申请日：1986-07-14
Applicant: SONY CORPORATION
IPC: H01G4/12
CPC classification number: C23C16/405 , H01G4/085 , H01G4/10
Abstract: A high dielectric constant thin film deposited on a substrate can be used to form a capacitor. The thin film is composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of titanium (Ti) to tantalum (Ta) is in the range of 0.1 to 4 atomic percent.
The thin film is deposited on the substrate by chemical vapour deposition, for example using a tantalum alkoxide and a titanium alkoxide.
A thin film of this type has a high dielectric strength as well as a high dielectric constant.
