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公开(公告)号：EP2772328A1
公开(公告)日：2014-09-03
申请号：EP12843695.3
申请日：2012-10-09
Applicant: Bando Chemical Industries, Ltd.
Inventor： TAKESUE, Masafumi , YAMADA , Mitsuru, , SHIMOYAMA ,Kenji , WATANABE,Tomofumi
CPC classification number: C09J9/02 , B22F1/0018 , B22F1/0022 , B22F1/0062 , B82Y30/00 , C08K3/08 , C08K9/04 , C09J11/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/29311 , H01L2224/29313 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29369 , H01L2224/32225 , H01L2224/32245 , H01L2224/83075 , H01L2224/83092 , H01L2224/83097 , H01L2224/83192 , H01L2224/83444
Abstract: Provided is a composition for bonding, in particular, a composition for bonding which contains metal particles, said composition for bonding enabling the achievement of high bonding strength by bonding at a relatively low temperature and having such heat resistance that a decrease in the bonding strength does not easily occur due to decomposition, deterioration or the like of a resin component when service temperature is increased. This composition for bonding is characterized by containing inorganic particles and an organic material that contains an amine and/or a carboxylic acid and adheres to at least a part of the surface of each inorganic particle, and is also characterized in that the weight loss rate when heated from room temperature to 200°C is 33-69% and the weight loss rate when heated from 200°C to 300°C is 24-50% as determined by thermal analysis.
Abstract translation: 本发明提供了一种用于粘合的组合物，特别是用于粘合的组合物，其包含金属颗粒，所述用于粘合的组合物能够在相对低的温度下通过粘合获得高的结合强度，并且具有这样的耐热性，使得结合强度降低 当使用温度升高时，不容易因树脂成分的分解，劣化等而发生。 这种用于粘合的组合物的特征在于含有无机颗粒和含有胺和/或羧酸的有机材料并粘附到每个无机颗粒的至少一部分表面上，其特征还在于，当 从室温加热至200℃为33-69％，通过热分析测定，从200℃加热至300℃时的重量损失率为24-50％。
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公开(公告)号：EP2772328A4
公开(公告)日：2015-08-05
申请号：EP12843695
申请日：2012-10-09
Applicant: BANDO CHEMICAL IND
Inventor： TAKESUE MASAFUMI , YAMADA MITSURU , SHIMOYAMA KENJI , WATANABE TOMOFUMI
CPC classification number: C09J9/02 , B22F1/0018 , B22F1/0022 , B22F1/0062 , B82Y30/00 , C08K3/08 , C08K9/04 , C09J11/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2929 , H01L2224/29311 , H01L2224/29313 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29369 , H01L2224/32225 , H01L2224/32245 , H01L2224/83075 , H01L2224/83092 , H01L2224/83097 , H01L2224/83192 , H01L2224/83444
Abstract: Provided is a composition for bonding, in particular, a composition for bonding which contains metal particles, said composition for bonding enabling the achievement of high bonding strength by bonding at a relatively low temperature and having such heat resistance that a decrease in the bonding strength does not easily occur due to decomposition, deterioration or the like of a resin component when service temperature is increased. This composition for bonding is characterized by containing inorganic particles and an organic material that contains an amine and/or a carboxylic acid and adheres to at least a part of the surface of each inorganic particle, and is also characterized in that the weight loss rate when heated from room temperature to 200°C is 33-69% and the weight loss rate when heated from 200°C to 300°C is 24-50% as determined by thermal analysis.
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3.发明公开THREE DIMENSIONAL DEVICE INTEGRATION METHOD AND INTEGRATED DEVICE 审中-公开一体化ANORDNUNG的DREIDIMENSIONALE INTEGRATIONSMETHODE
公开(公告)号：EP1245039A2
公开(公告)日：2002-10-02
申请号：EP00968318.6
申请日：2000-09-29
Applicant: Ziptronix, Inc.
Inventor： ENQUIST, Paul, M.
IPC: H01L21/58
CPC classification number: H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
Abstract: A device integration method and integrated device. The method includes the steps of polishing surfaces of first (10) and second (30) workpieces each to a surface roughness of about 5-10Å. The polished surfaces of the first and second workpieces are bonded together. A surface of a third workpiece (32) is polished to the surface roughness. The surface of the third workpiece is bonded to the joined first and second workpieces. The first, second and third workpieces may each be a semiconductor device having a thin material formed on one surface, preferably in wafer form. The thin materials are polished to the desired surface roughness and then bonded together. The thin materials may each have a thickness of approximately 1-10 times the surface non-planarity of the material on which they are formed. Any number of devices may be bonded together, and the devices may be different types of devices or different technologies.
Abstract translation: 一种方法可以包括将具有衬底的半导体器件直接结合到元件的步骤; 以及去除所述衬底的一部分以在结合之后露出所述半导体器件的剩余部分。 元件可以包括用于热扩散，阻抗匹配或RF隔离的衬底之一，天线以及由无源元件组成的匹配网络。 第二热扩散基板可以结合到半导体器件的其余部分。 可以通过第一或第二基底进行互连。 该方法还可以包括将多个半导体器件接合到元件，并且元件可以具有设置半导体器件的凹部。
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4.发明公开PROCÉDÉ DE COLLAGE DIRECT VIA DES COUCHES MÉTALLIQUES PEU RUGUEUSES 审中-公开PROCÉDÉDE COLLAGE直接通过DES DES COUCHESMÉTALLIQUESPEU RUGUUSES
公开(公告)号：EP3207564A1
公开(公告)日：2017-08-23
申请号：EP15780848.6
申请日：2015-10-14
Inventor： GONDCHARTON, Paul , BENAISSA, Lamine , IMBERT, Bruno
IPC: H01L21/58
CPC classification number: H01L24/83 , H01L21/187 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/2745 , H01L2224/278 , H01L2224/29082 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29166 , H01L2224/2918 , H01L2224/29186 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/83054 , H01L2224/83092 , H01L2224/83099 , H01L2224/83193 , H01L2224/83895 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/1068 , H01L2924/20102 , H01L2924/00014
Abstract: The invention relates to a method for assembling a first substrate (1) and a second substrate (3) via metal adhesion layers (2, 4), said method comprising the steps of: depositing, on the surface of each of the first and second substrates (1, 3), a metal layer (2, 4) with a thickness controlled such as to limit the surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to the air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at the end of the depositing step. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.
Abstract translation: 一种用于经由金属粘合层组装第一基板和第二基板的方法，该方法包括：在第一和第二基板中的每一个的表面上沉积金属层，该金属层的厚度被控制以限制每个沉积的表面粗糙度 金属层低于粗糙度阈值; 将沉积在第一和第二衬底的表面上的金属层暴露于空气; 通过使沉积的金属粘附层接触来直接粘附第一和第二基底，接触层的表面粗糙度是在沉积结束时获得的。 可以在空气中，大气压力和室温下进行粘合，而不会对由于直接接触沉积的金属粘合层而导致的第一和第二基底的组件施加压力。
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公开(公告)号：EP1245039A4
公开(公告)日：2007-06-27
申请号：EP00968318
申请日：2000-09-29
Applicant: ZIPTRONIX INC
Inventor： ENQUIST PAUL M
IPC: H01L21/331 , H01L21/02 , H01L21/20 , H01L21/60 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L21/98 , H01L27/00 , H01L27/04 , H01L27/088 , H01L27/092 , H01L29/737 , H01L21/58
CPC classification number: H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
Abstract: A device integration method and integrated device. The method includes the steps of polishing surfaces of first (10) and second (30) workpieces each to a surface roughness of about 5-10Å. The polished surfaces of the first and second workpieces are bonded together. A surface of a third workpiece (32) is polished to the surface roughness. The surface of the third workpiece is bonded to the joined first and second workpieces. The first, second and third workpieces may each be a semiconductor device having a thin material formed on one surface, preferably in wafer form. The thin materials are polished to the desired surface roughness and then bonded together. The thin materials may each have a thickness of approximately 1-10 times the surface non-planarity of the material on which they are formed. Any number of devices may be bonded together, and the devices may be different types of devices or different technologies.
