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公开(公告)号：EP4028583A1
公开(公告)日：2022-07-20
申请号：EP20760995.9
申请日：2020-08-04
Applicant: GlobalWafers Co., Ltd.
Inventor： HUDSON, Carissima Marie , RYU, Jae-Woo
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公开(公告)号：EP4008813A1
公开(公告)日：2022-06-08
申请号：EP20211881.6
申请日：2020-12-04
Applicant: Siltronic AG
Inventor： Daniel, Matthias , Stockmeier, Ludwig
Abstract: Verfahren zum Ziehen eines Einkristalls aus Silizium aus einer Schmelze, die in einem Tiegel enthalten ist, umfassend das Ziehen eines Einkristalls in einer ersten Phase, in der ein Anfangskonus entsteht, wobei ein Durchmesser D(to) und ein Kristallwinkel ω(t 0 ) jeweils zum Zeitpunkt t 0 bestimmt wird und eine Regelung verwendet wird, deren Führungsgröße den Durchmesser D(to) enthält, und das Ziehen des Einkristalls in einer zweiten Phase, in der ein zylindrischer Abschnitt mit einem Zieldurchmesser D T (Stabphase) entsteht, wobei eine Regelung verwendet wird, deren Führungsgröße die Länge des zylindrischen Abschnitts enthält, und der Wechsel zwischen der ersten Phase und der zweiten Phase dann vollzogen wird, sobald alternativ folgende Kriterien erfüllt sind:
Winkelkriterium: D(to) > D T - Δ dω und co(to) max,
Durchmesserkriterium: D(to) > D T - Δ dd,
wobei die Abweichung vom Zieldurchmesser für das Winkelkriterium Δ dω nicht kleiner ist als 0 mm und nicht größer ist als 6 mm und der maximale Kristallwinkel ω max nicht kleiner ist als 0° und nicht größer ist als 20° und die Abweichung vom Zieldurchmesser für das Durchmesserkriterium Δ dd nicht kleiner ist als -2 mm und nicht größer ist als 5 mm.
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3.发明公开
公开(公告)号：EP3798337A1
公开(公告)日：2021-03-31
申请号：EP19891925.0
申请日：2019-11-11
Applicant: Longi Green Energy Technology Co., Ltd.
Inventor： WANG, Zhengyuan , LI, Qiao , XU, Zhanjun
Abstract: A method and device for controlling constant-diameter growth of monocrystalline silicon and a storage medium, relating to the technical field of crystal fabrication, which can automatically adjust the controlling level of the crystal constant-diameter growth, to in turn control the crystal diameter better. The particular technical solution includes: acquiring PID initial values of an i -th cycle period; correcting the PID initial values of the i -th cycle period, and obtaining PID corrected values of the i -th cycle period; and according to the PID corrected values of the i -th cycle period, controlling a crystal growth diameter of the i -th cycle period. The present application is used to control constant-diameter growth of monocrystalline silicon.
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公开(公告)号：EP2567003B1
公开(公告)日：2018-01-10
申请号：EP11710924.9
申请日：2011-03-02
Inventor： KELLERMAN, Peter, L. , THRONSON, Gregory, D. , SUN, Dawei
IPC: C30B15/06 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , C30B11/00 , C30B15/00 , C30B15/24 , C30B15/34 , C30B35/00 , C30B9/00 , C30B15/22
CPC classification number: C30B35/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B15/002 , C30B15/06 , C30B15/22 , C30B15/24 , C30B15/34 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , Y10T117/1048 , Y10T117/1092
Abstract: In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
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5.发明授权PREPARATION OF DOPED GARNET STRUCTURE SINGLE CRYSTALS WITH DIAMETERS OF UP TO 500 MM 有权用掺杂石榴石结构单晶的生产和500 MM UP的直径
公开(公告)号：EP2675944B1
公开(公告)日：2015-03-25
申请号：EP12705610.9
申请日：2012-01-10
Applicant: Crytur Spol. S.R.O.
Inventor： HOUZVICKA, Jindrich , BARTOS , Karel
Abstract: Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60° from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.
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公开(公告)号：EP2639342B1
公开(公告)日：2014-03-12
申请号：EP12196109.8
申请日：2012-12-07
Applicant: Siltronic AG
Inventor： Okabe, Kouji , Lehmann, Lothar
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7.发明公开Method of manufacturing silicon single crystal 有权Verfahren zur Herstellung von monokristallinem Silicium
公开(公告)号：EP2639342A1
公开(公告)日：2013-09-18
申请号：EP12196109.8
申请日：2012-12-07
Applicant: Siltronic AG
Inventor： Okabe, Kouji , Lehmann, Lothar
Abstract: [Subject] To provide a method of manufacturing a silicon single crystal, capable of suppressing generation of dislocation extending from a neck portion to a straight part of ingot.
[Solving Means] A method of manufacturing a silicon single crystal according to this invention includes the steps of preparing a silicon melt (a preparation step (S10)), forming a neck portion continuing from a seed crystal by bringing the seed crystal in contact with the silicon melt (a neck portion formation step (S20)), separating the neck portion from the silicon melt (a separation step (S30)), decreasing a temperature of the neck portion separated from the silicon melt from a temperature of the neck portion in the neck portion formation step (S20) (a cooling step (S40)), and forming a silicon single crystal continuing from the neck portion by again bringing the neck portion in contact with the silicon melt after the cooling step (S40) (a re-growth step (S50)).Abstract translation: [主题]提供一种制造硅单晶的方法，其能够抑制从颈部延伸到锭的直线部分的位错的产生。 本发明的制造硅单晶的方法包括以下步骤：制备硅熔体（制备步骤（S10）），通过使晶种与晶种接触而形成与晶种连续的颈部 硅熔体（颈部形成步骤（S20）），将颈部与硅熔体分离（分离步骤（S30）），将从硅熔体分离的颈部的温度从颈部的温度降低 在颈部形成工序（S20）（冷却工序（S40））中，通过在冷却工序后再次使颈部与硅熔体接触而形成从颈部继续的硅单晶（S40）（a 再生长步骤（S50））。
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公开(公告)号：EP2287369B1
公开(公告)日：2012-11-14
申请号：EP10191738.3
申请日：2003-07-07
Applicant: SUMCO Corporation
Inventor： Wakabayashi, Daisuke , Saito, Masao , Sato, Satoshi , Furukawa, Jun , Kitamura, Kounosuke
CPC classification number: C30B29/06 , C30B15/203 , C30B15/22
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9.发明授权CONTROLLING MELT-SOLID INTERFACE SHAPE OF A GROWING SILICON CRYSTAL USING A VARIABLE MAGNETIC FIELD 有权管制熔体 - 固体 - 表面上的生长硅晶体的形式使用可变磁场
公开(公告)号：EP1831436B1
公开(公告)日：2009-04-15
申请号：EP05852293.9
申请日：2005-11-29
Applicant: MEMC Electronic Materials, Inc.
CPC classification number: C30B29/06 , C30B15/203 , C30B15/22 , C30B15/305 , Y10S117/917 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
Abstract: Methods and system for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where theingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.
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10.发明公开SILICON SINGLE CRYSTAL MANUFACTURING SYSTEM AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD USING THE SYSTEM 有权系统用于生产硅单晶和生产硅的方法中的通过使用系统
公开(公告)号：EP2039811A1
公开(公告)日：2009-03-25
申请号：EP07744206.9
申请日：2007-05-28
Applicant: Shin-Etsu Handotai Company Limited
Inventor： IIDA, Makoto , MITAMURA, Nobuaki , YANAGIMACHI, Takahiro
CPC classification number: C30B15/203 , C30B29/06 , C30B35/00
Abstract: The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in the subsequent batch. As a result, there can be provided the system for manufacturing a silicon single crystal that can more assuredly obtain a silicon single crystal having a desired crystal quality and improve productivity or a yield and a method for manufacturing a silicon single crystal using this system.
Abstract translation: 本发明提供了一种系统，用于制造硅单晶主要设计在其下F / G的值被控制在为了确实使用的提拉装置制造的硅单晶的结晶品质的预定范围内的制造条件 CZ方法，如果一个目标的标准内，包括自动，至少：手段1中从在先前的间歇的单晶硅的结晶品质结果的后续批次的硅单晶的暂时设计的制造条件; 装置2计算从在F和/或G的变化量，由于在随后的批次中的提拉装置的组成构件的校正量; 装置3由于在随后的批次的制造过程计算从在F和/或G的变化量的修正量; 和装置4由装置2和/或手段3以由装置1的制造条件，以计算在随后的批次制造条件加上校正量。 其结果是，可以提供该系统用于制造硅单晶可以更可靠地并获得具有晶体所需质量的硅单晶和提高生产率或产率和用于制造使用该系统的单晶硅的方法。
