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    HOLLOW STRUCTURE, ELECTRONIC COMPONENT USING SAME, AND NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION
    2.
    发明公开
    HOLLOW STRUCTURE, ELECTRONIC COMPONENT USING SAME, AND NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION 审中-公开

    公开(公告)号：EP4276055A1

    公开(公告)日：2023-11-15

    申请号：EP21917741.7

    申请日：2021-12-27

    申请人： Toray Industries, Inc.

    发明人： KOYAMA, Yutaro ,  ARAKI, Hitoshi

    IPC分类号： B81B1/00 ,  B81B7/02 ,  G03F7/004 ,  G03F7/023 ,  G03F7/027 ,  G03F7/031 ,  G03F7/037

    摘要： The present invention provides a hollow structure having a low acid ion content and low wiring corrosion when stored in high-temperature, high-humidity conditions. The present invention relates to a hollow structure in which an organic film (I) having a film thickness of 5-30 um as a hollow structure support material and an organic film (II) having a film thickness of 5-30 um as a hollow structure roof material are layered in said order from the upper surface of a substrate having a metal wiring, wherein, when the organic film (I) and the organic film (II) are independently evaluated by the following method for evaluating ion elution amounts, the total of the ion elution amount of the organic film (I) and the ion elution amount of the organic film (II) is no more than 4,000 ppm. (Ion elution amount evaluation method) An organic film is placed in pure water having a mass 10 times that of the organic film and is extracted in hot water for 10-20 hours at 100-121 °C, after which the supernatant of the liquid extract is used as a sample solution. The sample solution and a target ion standard solution are introduced into an ion chromatography device, the concentrations of formate ions, acetate ions, propionate ions, and sulfate ions in the sample solution are determined by a calibration curve method, and a value obtained by converting the total of said concentrations into the mass of eluted ions relative to the mass of the organic film is used as the ion elution amount.

    PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT
    6.
    发明公开
    PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT 审中-公开

    公开(公告)号：EP3974904A1

    公开(公告)日：2022-03-30

    申请号：EP21197201.3

    申请日：2021-09-16

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Urano, Hiroyuki ,  Iio, Masashi ,  Takemura, Katsuya

    IPC分类号： G03F7/004 ,  G03F7/023 ,  G03F7/037 ,  G03F7/038 ,  G03F7/075 ,  G03F7/40

    摘要： The present invention is a photosensitive resin composition containing: (A) a resin; (B) a photosensitizer; (C) a surfactant containing a structural unit represented by the following average composition formula (1); and (D) a solvent, where Y 1 and Y 2 each independently represent a hydrogen atom, a methyl group, a phenyl group, or a group represented by the following general formula (2), at least one of Y 1 and Y 2 is a group represented by the following general formula (2), R 1 to R 6 are monovalent hydrocarbon groups that may be the same or different and optionally contain a heteroatom, having 1 to 20 carbon atoms, "l" and "n" are each independently integers of 1 to 100, and "m" is an integer of 0 to 100. This provides: a photosensitive resin composition that is excellent in film thickness uniformity at the time of application and that has reduced coating defects when forming a thick film; a patterning process performed using the photosensitive resin composition; a cured film formed by curing the pattern; and an electronic component having the cured film.

             (R 1 R 2 Y 2 SiO 1/2 ) 2 (R 3 Y 1 SiO 2/2 ) I (R 5 R 6 SiO 2/2 ) n (R 4 SiO 3/2 )m     (1)