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    GRAPHENE DEVICE AND METHOD OF FABRICATION OF A GRAPHENE DEVICE
    8.
    发明公开
    GRAPHENE DEVICE AND METHOD OF FABRICATION OF A GRAPHENE DEVICE 审中-公开

    公开(公告)号：EP4390385A1

    公开(公告)日：2024-06-26

    申请号：EP22383281.7

    申请日：2022-12-23

    Applicant: Graphenea Semiconductor S.L.U.

    Inventor： Torres Alonso, Elías

    IPC: G01N27/414 ,  H01L29/16 ,  H01L21/00

    CPC classification number: G01N27/4146 ,  H01L29/1606 ,  G01N27/4145 ,  H01L29/778 ,  H01L29/42356 ,  H01L29/786 ,  H01L29/66045 ,  H01L21/31111

    Abstract: A method of fabricating a graphene-based solid-state device, the method comprising: disposing a layer of an electric conductive material (102) on a substrate (101); depositing a first layer of an insulating material (103) on the layer of an electric conductive material (102), the first layer of an insulating material (103) being made of a first oxide dielectric material; patterning the first layer of an insulating material (103) to expose at least a portion of the layer of an electric conductive material (102); disposing a graphene layer (105) on the first layer of an insulating material (103); patterning the graphene layer (105) to define at least one channel region; applying a lithographic process to define at least two contact areas in the graphene layer; depositing one metallic contact (106) on each one of the at least two defined contact areas of the graphene layer (105); depositing a second layer of an insulating material (107) on the stacked structure, the second layer of an insulating material (107) being made of a second oxide dielectric material different of the first oxide dielectric material of which the first layer of an insulating material (103) is made; and wherein the selectivity to at least one etchant of the first oxide dielectric material is different from the selectivity to said at least one etchant of the second oxide dielectric material.

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