公开(公告)号：EP4315432A1

公开(公告)日：2024-02-07

申请号：EP22721929.2

申请日：2022-03-30

申请人： Raytheon Company

发明人： DEJARLD, Matthew T. ,  LAROCHE, Jeffrey R. ,  LONG, Clay T. ,  SOIREZ, Lovelace J.

IPC分类号： H01L31/09 ,  H01L31/0304 ,  H01L27/144 ,  H01L27/146

公开(公告)号：EP3012874B1

公开(公告)日：2023-12-20

申请号：EP14003616.1

申请日：2014-10-23

发明人： Guter, Wolfgang ,  Strobl, Gerhard ,  Dimroth, Frank ,  Walker, Alexandre William

IPC分类号： H01L31/041 ,  H01L31/0687 ,  H01L31/0304 ,  H01L31/18

公开(公告)号：EP3872868B1

公开(公告)日：2023-06-07

申请号：EP20159311.8

申请日：2020-02-25

发明人： DERKACS, Daniel

IPC分类号： H01L31/0304 ,  H01L31/056 ,  H01L31/0687

公开(公告)号：EP4170732A1

公开(公告)日：2023-04-26

申请号：EP21203584.4

申请日：2021-10-19

申请人： SolAero Technologies Corp., a corporation of the state of Delaware

发明人： DERKACS, Daniel ,  HART, John ,  BITTNER, Zachary ,  ESPENLAUB, Andrew Colin

IPC分类号： H01L31/0687 ,  H01L31/054 ,  H01L31/0304

摘要： A multijunction solar cell comprising a first solar subcell having a first band gap; a second solar subcell disposed adjacent to said first solar subcell and including an emitter layer, and a base layer having a second band gap less than the first band gap, and being lattice mismatched with the upper first solar subcell, and an intermediate layer directly adjacent to and disposed between first and the second solar subcells and compositionally graded to lattice match the first solar subcell on one side and the second solar subcell on the other side, and arranged so that light can enter and pass through the first solar subcell and at least a portion of which can be reflected back into the first solar subcell by the intermediate layer, and is composed of a plurality of layers of materials with discontinuities in their respective indices of refraction.

公开(公告)号：EP3965168B1

公开(公告)日：2023-03-08

申请号：EP20000322.6

申请日：2020-09-07

发明人： Meusel, Matthias ,  Berg, Alexander ,  Guter, Wolfgang

IPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/054

公开(公告)号：EP4092763A1

公开(公告)日：2022-11-23

申请号：EP21208322.4

申请日：2021-11-15

申请人： SolAero Technologies Corp., a corporation of the state of Delaware

发明人： HART, John ,  DERKACS, Daniel ,  BITTNER, Zachary ,  ESPENLAUB, Andrew Colin

IPC分类号： H01L31/0687 ,  H01L31/065 ,  H01L31/078 ,  H01L31/0304 ,  H01L31/054 ,  H01L31/041

摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer. Methods of manufacturing are also disclosed.

公开(公告)号：EP4062458A2

公开(公告)日：2022-09-28

申请号：EP20812403.2

申请日：2020-11-18

申请人： The University of Sheffield

发明人： TAN, Chee Hing

IPC分类号： H01L31/107 ,  H01L31/0304

公开(公告)号：EP2615649B1

公开(公告)日：2022-09-28

申请号：EP13150886.3

申请日：2013-01-10

发明人： Rehder, Eric M.

IPC分类号： H01L31/0735 ,  H01L31/0352 ,  H01L31/0304

公开(公告)号：EP3923349A1

公开(公告)日：2021-12-15

申请号：EP21187462.3

申请日：2018-01-17

申请人： SolAero Technologies Corp.

发明人： DERKACS, Daniel ,  BITTNER, Zachary ,  WHIPPLE, Samantha ,  HAAS, Alexander ,  HART, John ,  MILLER, Nathaniel ,  PATEL, Pravin ,  SHARPS, Paul

IPC分类号： H01L31/0304 ,  H01L31/0693

摘要： A four junction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to and lattice mismatched from said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap.

公开(公告)号：EP3167491B1

公开(公告)日：2021-10-20

申请号：EP15819204.7

申请日：2015-07-08

发明人： SATO, Shunichi

IPC分类号： H01L31/0687 ,  H01L31/0693 ,  H01L31/0304 ,  H01L31/18