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公开(公告)号：JP5533876B2
公开(公告)日：2014-06-25
申请号：JP2011529863
申请日：2010-08-12
Applicant: 株式会社村田製作所
IPC: B23K35/22 , B23K1/00 , B23K35/14 , B23K35/26 , B23K35/30 , B23K35/363 , B23K101/40 , C22C9/05 , C22C9/06 , C22C12/00 , C22C13/00 , C22C13/02 , H05K3/34
CPC classification number: B23K35/025 , B23K1/00 , B23K1/0016 , B23K35/262 , B23K35/3613 , B23K35/362 , B23K2201/40 , C22C9/05 , C22C9/06 , C22C13/00 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/1132 , H01L2224/1329 , H01L2224/13294 , H01L2224/13311 , H01L2224/13347 , H01L2224/16503 , H01L2224/16507 , H01L2224/2732 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29311 , H01L2224/29347 , H01L2224/32503 , H01L2224/32507 , H01L2224/81192 , H01L2224/81211 , H01L2224/81447 , H01L2224/81815 , H01L2224/83192 , H01L2224/83211 , H01L2224/83447 , H01L2224/83815 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H05K3/3484 , H05K2201/0215 , H05K2201/0272 , Y10T403/479 , Y10T428/31678 , H01L2924/01028 , H01L2924/00014 , H01L2924/00 , H01L2924/01014 , H01L2924/01015 , H01L2924/01026 , H01L2924/01027 , H01L2924/01046 , H01L2924/01083 , H01L2924/00015 , H01L2924/00012
Abstract: A solder paste including a metal component consisting of a first metal powder and a second metal powder having a melting point higher than that of the first metal, and a flux component. The first metal is Sn or an alloy containing Sn, and the second metal is a metal or alloy which forms an intermetallic compound having a melting point of 310° C. or higher with the first metal and has a lattice constant difference, i.e. a difference in between the lattice constant of the intermetallic compound and the lattice constant of the second metal component, of 50% or greater.
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公开(公告)号：JP5467799B2
公开(公告)日：2014-04-09
申请号：JP2009117689
申请日：2009-05-14
Applicant: ルネサスエレクトロニクス株式会社
CPC classification number: H01L23/49562 , H01L21/4842 , H01L23/4006 , H01L23/49503 , H01L23/4952 , H01L23/49524 , H01L23/49575 , H01L24/06 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/0603 , H01L2224/27013 , H01L2224/29111 , H01L2224/29139 , H01L2224/32245 , H01L2224/37147 , H01L2224/40137 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48472 , H01L2224/48624 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48724 , H01L2224/48744 , H01L2224/48755 , H01L2224/48764 , H01L2224/4903 , H01L2224/49051 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83801 , H01L2224/8385 , H01L2224/85375 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H01L2924/2076 , H01L2924/30107 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01026 , H01L2224/05552 , H01L2924/00015
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公开(公告)号：JP2014027122A
公开(公告)日：2014-02-06
申请号：JP2012166640
申请日：2012-07-27
Applicant: Nippon Steel Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社
Inventor： HASHINO HIDEJI , ISHIKAWA SHINJI , TERAJIMA SHINICHI , TANAKA MASAMOTO
CPC classification number: H01L23/49866 , B23K35/0244 , B23K35/025 , B23K35/262 , B23K2201/36 , B23K2201/40 , B23K2201/42 , H01L23/49811 , H01L23/49816 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16503 , H01L2224/81024 , H01L2224/81048 , H01L2224/81191 , H01L2224/81447 , H01L2224/81815 , H01L2224/81948 , H01L2924/301 , H01L2924/381 , H05K3/3436 , H05K3/3463 , H05K2201/0769 , H05K2203/041 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01027 , H01L2924/01026 , H01L2924/01015 , H01L2924/01012 , H01L2924/01032 , H01L2924/01046 , H01L2924/01025 , H01L2924/01013 , H01L2924/01051 , H01L2924/01049 , H01L2924/0103 , H01L2924/00014 , H01L2924/00012 , H01L2924/00015
Abstract: PROBLEM TO BE SOLVED: To provide a lead-free solder bump bonding structure which can suppress occurrence of electromigration phenomenon, while reducing the load during manufacture when compared with prior art.SOLUTION: In a lead-free solder bump bonding structure B11, uneven shape at the interface (IMC interface) 12 of intermetallic compound layers 7a, 7b on the lead-free solder bump 5 side can be 0.02 (pieces/μm) or less, even if a Ni layer is not formed previously as a barrier layer on the surface of each Cu electrode 3b of first and second electronic members 2, 9. Since Cu is less likely to spread, occurrence of electromigration phenomenon can be suppressed. Since a deposition step for forming a Ni layer, as a barrier layer, on the surface of the Cu electrodes 3a, 3b can be saved, the load can be reduced during manufacture. Consequently, the lead-free solder bump bonding structure which can suppress the occurrence of electromigration phenomenon, while reducing the load during manufacture, can be provided.
Abstract translation: 要解决的问题：提供一种无铅焊料接合结构，可以抑制电迁移现象的发生，同时与现有技术相比减少了制造过程中的负载。解决方案：在无铅焊料接合结构B11中，不均匀形状 在无铅焊料凸块5侧的金属间化合物层7a，7b的界面（IMC界面）12上，即使以前没有将Ni层作为阻挡层形成，也可以为0.02（个/μm）以下 第一和第二电子部件2,9的每个Cu电极3b的表面。由于Cu不太可能扩展，可以抑制电迁移现象的发生。 由于可以节省在Cu电极3a，3b的表面上形成作为阻挡层的Ni层的沉积步骤，所以可以在制造时减少负载。 因此，可以提供能够抑制电迁移现象的发生，同时降低制造时的负载的无铅焊料接合结构。
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公开(公告)号：JP5409673B2
公开(公告)日：2014-02-05
申请号：JP2011049537
申请日：2011-03-07
Applicant: 新日鉄住金マテリアルズ株式会社
IPC: H01L21/60 , B21C37/04 , B32B15/01 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L23/49
CPC classification number: C22C5/02 , B21C37/042 , B23K35/0272 , B23K2201/40 , B32B15/018 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L24/43 , H01L2224/05624 , H01L2224/05647 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85948 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01105 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/20751 , H01L2924/3862 , H01L2924/01046 , H01L2924/0102 , H01L2924/01049 , H01L2924/00015 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/00014 , H01L2924/01057 , H01L2924/01058 , H01L2924/01024 , H01L2924/01039 , H01L2924/01026 , H01L2224/4516 , H01L2224/45155 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012 , H01L2924/01033
Abstract: A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.
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公开(公告)号：JP5399581B1
公开(公告)日：2014-01-29
申请号：JP2013102191
申请日：2013-05-14
Applicant: 田中電子工業株式会社
IPC: H01L21/60
CPC classification number: H01L2224/05624 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/43 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/4554 , H01L2224/48624 , H01L2224/48644 , H01L2224/48664 , H01L2224/48669 , H01L2924/01204 , H01L2924/01046 , H01L2924/01045 , H01L2924/01077 , H01L2924/01044 , H01L2924/01029 , H01L2924/01028 , H01L2924/01026 , H01L2924/01012 , H01L2924/0103 , H01L2924/01013 , H01L2924/01049 , H01L2924/01014 , H01L2924/01032 , H01L2924/01004 , H01L2924/01083 , H01L2924/01034 , H01L2924/01058 , H01L2924/01039 , H01L2924/01057 , H01L2924/0102 , H01L2924/01063 , H01L2924/01079 , H01L2924/01205 , H01L2924/01203 , H01L2924/00014 , H01L2924/00015 , H01L2924/01062 , H01L2924/01064 , H01L2924/20752 , H01L2924/01025 , H01L2924/0105 , H01L2924/01022 , H01L2924/01051 , H01L2924/013 , H01L2924/00 , H01L2924/00013 , H01L2924/00012
Abstract: 【課題】 ボンディングワイヤの表面に不安定な硫化銀層を形成しても、強固な硫化銀（Ａｇ
２ Ｓ）膜が無く、安定した数ギガＨｚ帯等の超高周波信号を送ることができるＡｇ−Ｐｄ−Ａｕ基合金の高速信号線用ボンディングワイヤを提供することを目的とする。
【解決手段】 パラジウム（Ｐｄ）を２．５〜４．０質量％、金（Ａｕ）を１．５〜２．５質量％および残部が純度９９．９９質量％以上の銀（Ａｇ）からなる三元合金であって、そのボンディングワイヤの断面は表皮膜と芯材とからなり、そのボンディングワイヤの断面は表皮膜と芯材とからなり、その表皮膜は、連続鋳造後に縮径された連鋳面と表面偏析層とからなり、その表面偏析層は、芯材よりも銀（Ａｇ）の含有量が漸増し、かつ、金（Ａｕ）の含有量が漸減している合金領域からなることを特徴とする高速信号線用ボンディングワイヤである。
【選択図】図１Abstract translation: 本发明的目的是提供一种由Ag-Pd-Pt基合金形成的用于高速信号线的接合线，其能够传输几GHz频段的稳定的超高频信号，并且 即使在接合线的表面上形成不稳定的硫化银层，也不具有强硫化银（Ag 2 S）膜。 提供了由含有2.5〜4.0质量％的钯（Pd），1.5〜2.5质量％的铂（Pt），余量为银（Ag）的三元素合金形成的高速信号线的接合线， 纯度为99.99质量％以上，其中通过皮膜和芯形成接合线的横截面，并且其中皮膜包括在连续铸造之后收缩的连续套管表面和由...组成的表面偏析层 合金区域与核心相比含有增加量的银（Ag）和减少的金（Au）。
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公开(公告)号：JP5380244B2
公开(公告)日：2014-01-08
申请号：JP2009243258
申请日：2009-10-22
Applicant: ルネサスエレクトロニクス株式会社
CPC classification number: H01L23/49503 , H01L21/4835 , H01L21/565 , H01L23/3107 , H01L23/49582 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/02166 , H01L2224/05554 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/8385 , H01L2224/85181 , H01L2224/92247 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/00014 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/01032 , H01L2924/01026 , H01L2924/01028 , H01L2924/01083
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公开(公告)号：JP5349382B2
公开(公告)日：2013-11-20
申请号：JP2010066859
申请日：2010-03-23
Applicant: 新日鉄住金マテリアルズ株式会社
IPC: H01L21/60 , B21C37/04 , B32B15/01 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L23/49
CPC classification number: C22C5/02 , B21C37/042 , B23K35/0272 , B23K2201/40 , B32B15/018 , C22C5/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , C22C21/02 , H01L24/43 , H01L2224/05624 , H01L2224/05647 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85948 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01105 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/20751 , H01L2924/3862 , H01L2924/01046 , H01L2924/0102 , H01L2924/01049 , H01L2924/00015 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/00014 , H01L2924/01057 , H01L2924/01058 , H01L2924/01024 , H01L2924/01039 , H01L2924/01026 , H01L2224/4516 , H01L2224/45155 , H01L2924/00 , H01L2924/013 , H01L2924/01006 , H01L2924/00012 , H01L2924/01033
Abstract: A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same.
Abstract translation: 用于半导体器件的接合线具有芯线和周边，其包括主要由两者共同的元素和/或所述金属的合金或合金构成的导电金属，以及在芯线和周边之间的扩散层或 由构成芯线和外围的元件构成的金属间化合物层和用于半导体器件的接合线，其特征在于，具有包含第一导电金属或主要由第一导电金属构成的合金的芯线，外围包括第二导电金属 不同于芯线的第一导电金属或主要由第二导电金属构成的合金的导电金属，以及芯线与周边之间的扩散层或金属间化合物层及其制造方法。
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公开(公告)号：JP2013209648A
公开(公告)日：2013-10-10
申请号：JP2013055002
申请日：2013-03-18
Applicant: Hitachi Chemical Co Ltd , 日立化成株式会社
Inventor： TOMISAKA KATSUHIKO , KOBAYASHI KOJI , TAKETAZU JUN , ARIFUKU MASAHIRO , KOJIMA KAZUYOSHI , MOCHIZUKI AKIOMI
IPC: C09J201/00 , C09J9/02 , C09J11/04 , C09J11/06 , C09J163/00 , H01B1/00 , H01B1/22 , H01R4/04
CPC classification number: H05K3/323 , C08K7/16 , C08K9/02 , C09J9/02 , C09J11/04 , C09J163/00 , H01L24/29 , H01L24/83 , H01L2224/05568 , H01L2224/05573 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/13016 , H01L2224/13144 , H01L2224/16 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/2939 , H01L2224/294 , H01L2224/29439 , H01L2224/29447 , H01L2224/29455 , H01L2224/29499 , H01L2224/2989 , H01L2224/81903 , H01L2224/83192 , H01L2224/838 , H01L2224/83851 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/07811 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01R4/04 , H01R11/01 , H01R12/52 , H01R13/03 , H05K2201/0218 , H05K2201/0221 , Y10T29/49117 , Y10T428/256 , H01L2924/01028 , H01L2924/01026 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: PROBLEM TO BE SOLVED: To provide a circuit connection material capable of achieving good electrical connection between respective circuit electrodes, and also capable of fully enhancing long term reliability of electric characteristics between circuit electrodes; and a connection structure of circuit members and connection method of circuit members using the material.SOLUTION: This circuit connection material 10 includes an adhesive composition and a conductive particle, where the conductive particle 12 has a projection 14 comprising one, or two or more metal layers 22 on a nucleus 21, the metal layer 22 is formed at least on the surface of the projection 14, the metal layer 22 is composed of nickel or a nickel alloy, and the compressive elastic modulus of the conductive particle 12 at 20% compression is 100-800 kgf/mm.
Abstract translation: 要解决的问题：提供能够在各个电路电极之间实现良好的电连接的电路连接材料，并且还能够完全提高电路电极之间的电特性的长期可靠性; 以及电路构件的连接结构和使用该材料的电路构件的连接方法。解决方案：该电路连接材料10包括粘合剂组合物和导电颗粒，其中导电颗粒12具有包括一个或两个或更多个金属的突起14 金属层22至少在突起14的表面上形成，金属层22由镍或镍合金构成，导电粒子12的压缩弹性模量为20％压缩 是100-800kgf / mm。
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公开(公告)号：JP5281191B1
公开(公告)日：2013-09-04
申请号：JP2012288636
申请日：2012-12-28
Applicant: 田中電子工業株式会社
CPC classification number: H01L2224/05624 , H01L2224/43 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/48724 , H01L2224/85205 , H01L2924/00014 , H01L2924/01047 , H01L2924/10253 , H01L2924/351 , H01L2924/01014 , H01L2924/01026 , H01L2924/01204 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/01029 , H01L2924/01025 , H01L2924/01012 , H01L2924/0103 , H01L2924/01022 , H01L2924/00 , H01L2924/013 , H01L2224/48 , H01L2924/01021 , H01L2924/00013 , H01L2924/00012
Abstract: 【課題】パワー半導体用アルミニウム合金ボンディングワイヤにおけるチップ割れ及び熱衝撃試験特性を向上する。
【解決手段】 鉄（Fe）が０．０１〜０．２質量％、珪素（Si）が１〜２０質量ｐｐｍおよび残部が純度９９．９９７質量％以上のアルミニウム（Al）合金であって、
Feの固溶量が０．０１〜０．６％、Feの析出量がFe固溶量の７倍以下で、且つ、平均結晶粒径が６〜1２μｍの微細組織からなるアルミニウム合金細線。 AlFe化合物の析出を抑制して熱衝撃試験特性を向上する。
【選択図】図１Abstract translation: 本发明旨在改善用于半导电体的铝合金接合线的芯片裂纹和热冲击试验特性。 本发明涉及含有0.01-0.2质量％的Fe，1-20质量ppm的Si和余量（纯度大于99.997质量％的铝（A））的铝合金细丝，其中固体 Fe的溶解量在0.01-0.6％的范围内，Fe的析出量比Fe的固溶量少7倍，Fe由平均微晶尺寸为6〜12μm的微细结构构成。 ] m。 铝合金丝可减少AlFe组分的析出，提高热冲击试验的特性。
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公开(公告)号：JPWO2011049128A1
公开(公告)日：2013-03-14
申请号：JP2011537281
申请日：2010-10-20
Applicant: ローム株式会社
CPC classification number: H01L23/49513 , H01L21/4842 , H01L21/568 , H01L23/3121 , H01L23/3142 , H01L23/4827 , H01L23/49503 , H01L23/49548 , H01L23/49582 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05144 , H01L2224/05155 , H01L2224/05554 , H01L2224/05624 , H01L2224/05647 , H01L2224/2908 , H01L2224/29083 , H01L2224/29111 , H01L2224/29113 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/33505 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/48647 , H01L2224/48824 , H01L2224/48839 , H01L2224/48847 , H01L2224/73265 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/838 , H01L2224/83948 , H01L2224/85439 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/18301 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01026 , H01L2924/01028 , H01L2924/01083 , H01L2924/3512 , H01L2924/01206
Abstract: 本発明の半導体装置は、表面および裏面を有し、当該表面がCuからなるリードフレームと、表面および裏面を有し、当該裏面を形成するCu層を含み、当該裏面が前記リードフレームの前記表面に対向するように配置された半導体チップと、前記リードフレームと前記半導体チップとの間に介在された接合層とを含み、前記接合層は、Bi系材料層と、当該Bi系材料層に対して前記リードフレームと前記半導体チップとの対向方向の両側から前記Bi系材料層を挟みこむPbを含まないCu合金層とを含む積層構造を有する。
