公开(公告)号：JP2002344000A

公开(公告)日：2002-11-29

申请号：JP2001144313

申请日：2001-05-15

Applicant: ACRORAD CO LTD

Inventor： MORIYAMA JITSUKI ,  MURAKAMI MASANORI ,  KIYATAKE ATSUSHI ,  ONO RYOICHI

IPC: G01T1/24 ,  H01L27/14 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/09 ,  H01L31/108 ,  H01L31/118

Abstract: PROBLEM TO BE SOLVED: To provide a Schottky barrier type semiconductor radiation detecting element hard to be affected by polarization effect. SOLUTION: Related to a Schottky barrier type semiconductor radiation detecting element, one surface of a compound semiconductor crystal contains Inx Cdy Tez comprising indium, cadmium, and tellurium, as a means for applying a voltage to the compound semiconductor crystal whose main components are cadmium and tellurium.