公开(公告)号：US08113142B2

公开(公告)日：2012-02-14

申请号：US12111553

申请日：2008-04-29

申请人： Chang-Suk Oh

发明人： Chang-Suk Oh

IPC分类号： B05C5/02

CPC分类号： H01L21/67742 ,  H01L21/67178 ,  H01L21/6719 ,  Y10S414/135

摘要： In a substrate-processing apparatus for performing coating, baking and developing processes on a semiconductor substrate, a first processing block performs a coating process and a developing process on substrates. A second processing block is disposed opposite to the first processing block to heat-treat the substrates. The first processing block includes upper, middle and lower unit blocks. The upper and lower blocks include at least one coating unit for forming a layer on the substrates and at least one developing unit for developing a photoresist layer on the substrates, respectively. The middle unit block is detachably disposed between the upper and lower unit blocks and includes at least one of coating units and developing units. The configuration of the middle unit block may vary according to a process recipe to improve the throughput of the substrate-processing apparatus.

摘要翻译： 在用于在半导体基板上进行涂布，烘烤和显影处理的基板处理装置中，第一处理块在基板上进行涂布处理和显影处理。 第二处理块与第一处理块相对设置，以对基板进行加热处理。 第一处理块包括上，中，下单位块。 上部和下部块包括用于在基底上形成层的至少一个涂层单元和用于分别在基底上显影光致抗蚀剂层的至少一个显影单元。 中间单元块可拆卸地设置在上部和下部单元块之间，并且包括涂覆单元和显影单元中的至少一个。 中间单元块的配置可以根据处理配方而变化，以提高基板处理设备的生产量。

公开(公告)号：US08113141B2

公开(公告)日：2012-02-14

申请号：US12111545

申请日：2008-04-29

申请人： Chang-Suk Oh

发明人： Chang-Suk Oh

IPC分类号： B05C5/02

CPC分类号： H01L21/67742 ,  H01L21/67178 ,  H01L21/67745 ,  Y10S414/135

摘要： In a substrate-processing apparatus for performing coating, baking and developing processes on a semiconductor substrate, a first processing block performs a coating process and a developing process. A second processing block is disposed opposite to the first processing block to heat-treat substrates. A main transfer block is disposed between the first and second processing blocks to transfer the substrates. A third processing block is disposed on one side of the main transfer block in a direction perpendicular to an arrangement direction of the first and second processing blocks to adjust a temperature of the substrates. An auxiliary transfer block is disposed adjacent to the second and third processing blocks to transfer the substrates between the second and third processing blocks. Thus, an overload of the main transfer block may be reduced.

摘要翻译： 在用于在半导体基板上进行涂布，烘烤和显影处理的基板处理装置中，第一处理块执行涂布处理和显影处理。 第二处理块与第一处理块相对地设置以热处理基板。 主转移块设置在第一和第二处理块之间以转移基板。 第三处理块在垂直于第一和第二处理块的排列方向的方向上设置在主传送块的一侧上，以调整基板的温度。 辅助传送块设置成与第二和第三处理块相邻，以在第二和第三处理块之间传送衬底。 因此，可以减少主转移块的过载。

公开(公告)号：US08115142B2

公开(公告)日：2012-02-14

申请号：US12169889

申请日：2008-07-09

申请人： Chang-Suk Oh ,  Hyun-Kyung Kim

发明人： Chang-Suk Oh ,  Hyun-Kyung Kim

IPC分类号： H05B3/68 ,  A21B2/00

CPC分类号： H01L21/67109

摘要： In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole.

摘要翻译： 在用于调整基板的温度的板中，板的主体支撑基板。 第一通道和第二通道设置在板的主体内。 第一通道具有第一入口和第一出口，并通过其中的第一流体以调节基底的温度。 第二通道具有邻近第一出口的第二入口和邻近第一入口的第二出口，并且通过第二入口通过第二流体以调节基底的温度。 此外，第一和第二通道并排布置。 因此，可以整体上均匀地调整基板的温度。

公开(公告)号：US20080308038A1

公开(公告)日：2008-12-18

申请号：US12111545

申请日：2008-04-29

申请人： Chang-Suk Oh

发明人： Chang-Suk Oh

IPC分类号： B05C11/00

CPC分类号： H01L21/67742 ,  H01L21/67178 ,  H01L21/67745 ,  Y10S414/135

摘要： In a substrate-processing apparatus for performing coating, baking and developing processes on a semiconductor substrate, a first processing block performs a coating process and a developing process. A second processing block is disposed opposite to the first processing block to heat-treat substrates. A main transfer block is disposed between the first and second processing blocks to transfer the substrates. A third processing block is disposed on one side of the main transfer block in a direction perpendicular to an arrangement direction of the first and second processing blocks to adjust a temperature of the substrates. An auxiliary transfer block is disposed adjacent to the second and third processing blocks to transfer the substrates between the second and third processing blocks. Thus, an overload of the main transfer block may be reduced.

摘要翻译： 在用于在半导体基板上进行涂布，烘烤和显影处理的基板处理装置中，第一处理块执行涂布处理和显影处理。 第二处理块与第一处理块相对地设置以热处理基板。 主转移块设置在第一和第二处理块之间以转移基板。 第三处理块在垂直于第一和第二处理块的排列方向的方向上设置在主传送块的一侧上，以调整基板的温度。 辅助传送块设置成与第二和第三处理块相邻，以在第二和第三处理块之间传送衬底。 因此，可以减少主转移块的过载。

公开(公告)号：US20090014431A1

公开(公告)日：2009-01-15

申请号：US12169889

申请日：2008-07-09

申请人： Chang-Suk Oh ,  Hyun-Kyung Kim

发明人： Chang-Suk Oh ,  Hyun-Kyung Kim

IPC分类号： H05B3/68

CPC分类号： H01L21/67109

摘要： In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole.

摘要翻译： 在用于调整基板的温度的板中，板的主体支撑基板。 第一通道和第二通道设置在板的主体内。 第一通道具有第一入口和第一出口，并通过其中的第一流体以调节基底的温度。 第二通道具有邻近第一出口的第二入口和与第一入口相邻的第二出口，并且通过第二入口通过第二流体以调节基板的温度。 此外，第一和第二通道并排布置。 因此，可以整体上均匀地调整基板的温度。

公开(公告)号：US20080308039A1

公开(公告)日：2008-12-18

申请号：US12111553

申请日：2008-04-29

申请人： Chang-Suk Oh

发明人： Chang-Suk Oh

IPC分类号： B05C11/00

CPC分类号： H01L21/67742 ,  H01L21/67178 ,  H01L21/6719 ,  Y10S414/135

摘要： In a substrate-processing apparatus for performing coating, baking and developing processes on a semiconductor substrate, a first processing block performs a coating process and a developing process on substrates. A second processing block is disposed opposite to the first processing block to heat-treat the substrates. The first processing block includes upper, middle and lower unit blocks. The upper and lower blocks include at least one coating unit for forming a layer on the substrates and at least one developing unit for developing a photoresist layer on the substrates, respectively. The middle unit block is detachably disposed between the upper and lower unit blocks and includes at least one of coating units and developing units. The configuration of the middle unit block may vary according to a process recipe to improve the throughput of the substrate-processing apparatus.

摘要翻译： 在用于在半导体基板上进行涂布，烘烤和显影处理的基板处理装置中，第一处理块在基板上进行涂布处理和显影处理。 第二处理块与第一处理块相对设置，以对基板进行加热处理。 第一处理块包括上，中，下单位块。 上部和下部块包括用于在基底上形成层的至少一个涂层单元和用于分别在基底上显影光致抗蚀剂层的至少一个显影单元。 中间单元块可拆卸地设置在上部和下部单元块之间，并且包括涂覆单元和显影单元中的至少一个。 中间单元块的配置可以根据处理配方而变化，以提高基板处理设备的生产量。