公开(公告)号：US20090314205A1

公开(公告)日：2009-12-24

申请号：US12144485

申请日：2008-06-23

申请人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

发明人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

IPC分类号： B05C11/00

CPC分类号： G02B23/2492

摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cur-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.

摘要翻译： 公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。 照相机通过管道镜捕获图像。 通过反射护套和红外线（IR）截止滤波器，保护套管免受高温的影响。 可以在监视器上观看图像，并且可以由视频记录装置记录。 图像也可以由机器视觉系统处理。 该系统可以监测基座和基座和周围的结构。 可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。 可以采取基于偏差检测的操作来改善过程的性能。 还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。

公开(公告)号：US20070259112A1

公开(公告)日：2007-11-08

申请号：US11697516

申请日：2007-04-06

申请人： David Ishikawa ,  Craig Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii Samoilov

发明人： David Ishikawa ,  Craig Metzner ,  Ali Zojaji ,  Yihwan Kim ,  Arkadii Samoilov

IPC分类号： C23C16/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B35/00 ,  C23C16/45561 ,  C30B25/14 ,  Y10T117/10

摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

摘要翻译： 本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。 公开了许多其他方面。

公开(公告)号：US20070077355A1

公开(公告)日：2007-04-05

申请号：US11242298

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C16/52

摘要： A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

摘要翻译： 成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度 穿过多个区域的基板19以及用于测量基板19的实际发射率的至少一个辐射计410。 在另一个实施例中，辐射加热系统313设置在基板支撑件16的下方。 基底19的温度由来自高温计405和em值计410的高温测量数据获得。

公开(公告)号：US20070074665A1

公开(公告)日：2007-04-05

申请号：US11242299

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC分类号： C23C16/00

CPC分类号： C23C16/46 ,  C23C16/481 ,  C23C16/52

摘要： A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

摘要翻译： 成膜系统10包括由侧壁18和顶盖11限定的处理室15。 在一个实施例中，基座16可旋转地设置在系统10中，并与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305的下方以加热基板19。 在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基底19的温度。 基板19的温度由来自高温计58的高温测量数据获得。

公开(公告)号：US20060208215A1

公开(公告)日：2006-09-21

申请号：US11420928

申请日：2006-05-30

申请人： Craig Metzner ,  Shreyas Kher ,  Yeong Kim ,  M. Rocklein ,  Steven George

发明人： Craig Metzner ,  Shreyas Kher ,  Yeong Kim ,  M. Rocklein ,  Steven George

IPC分类号： C04B35/00

CPC分类号： H01L21/0228 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02205 ,  H01L21/02208 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

摘要翻译： 本发明通常是形成高k电介质层的方法，包括通过原子层沉积将铪化合物沉积到衬底上，包括将铪前体输送到衬底的表面，使铪前体反应并形成铪 将含氮的前体输送到含铪层，形成至少一个铪氮键并将铪化合物沉积到表面。

公开(公告)号：US20050009371A1

公开(公告)日：2005-01-13

申请号：US10913941

申请日：2004-08-06

申请人： Craig Metzner ,  Shreyas Kher ,  Shixue Han

发明人： Craig Metzner ,  Shreyas Kher ,  Shixue Han

IPC分类号： C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02307 ,  C23C14/083 ,  C23C14/10 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31645 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/78

摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

公开(公告)号：US08951351B2

公开(公告)日：2015-02-10

申请号：US11868289

申请日：2007-10-05

申请人： Kailash Kiran Patalay ,  Craig Metzner ,  Jean Vatus

发明人： Kailash Kiran Patalay ,  Craig Metzner ,  Jean Vatus

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/458 ,  C23C16/455 ,  H01L21/687

CPC分类号： C23C16/4585 ,  C23C16/45521 ,  H01L21/68728 ,  H01L21/68735

摘要： Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.

摘要翻译： 本文提供了在外延沉积工艺期间减少衬底上自动掺杂和背面缺陷的方法和装置。 在一些实施例中，用于减少衬底上的自动掺杂和背面缺陷的装置包括衬底支撑环，衬底支撑环具有衬底保持器结构，该衬底支撑结构构造成将衬底支撑在沿着由衬底背面限定的边缘处理的位置， 衬底或沿着边缘上或附近的多个离散点; 以及间隔环，用于将衬底支撑环定位在基座板上方以限定基座板和衬底背面之间的衬底间隙区域，间隔环包括穿过其中形成的多个开口，其有助于气体进入和离开 的衬底间隙区域。

公开(公告)号：US08726837B2

公开(公告)日：2014-05-20

申请号：US12144485

申请日：2008-06-23

申请人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

发明人： Kailash K. Patalay ,  Craig Metzner ,  David K. Carlson

IPC分类号： B05C11/00 ,  C23C16/00 ,  G01N21/00 ,  G01J5/00

CPC分类号： G02B23/2492

摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cut-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.

摘要翻译： 公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。 照相机通过管道镜捕获图像。 通过反光护套和红外（IR）截止滤光片，保护套管免受高温的影响。 可以在监视器上观看图像，并且可以由视频记录装置记录。 图像也可以由机器视觉系统处理。 该系统可以监测基座和基座和周围的结构。 可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。 可以采取基于偏差检测的操作来改善过程的性能。 还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。

公开(公告)号：US08519298B2

公开(公告)日：2013-08-27

申请号：US12731798

申请日：2010-03-25

申请人： Jianmin Wang ,  Craig Metzner ,  Gregory W. Schuh

发明人： Jianmin Wang ,  Craig Metzner ,  Gregory W. Schuh

IPC分类号： B23K26/00 ,  B23K26/14 ,  B23K26/02

CPC分类号： B23K26/0676 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  G02B27/283

摘要： A dual-beam laser cutting system uses laser beam polarization to output two identical laser beams. The dual identical laser beams are spaced appropriately to simultaneously cut a water thus increasing the laser cutting system's throughput as compared to a single-laser cutting system. In one implementation, the dual-beam laser cutting system 100 utilizes a beam expander 220, two half-wave plates 224, 238, a polarizing beam splitter 228, a mirror 236, and two lenses 234, 242 to provide two identical laser beams 202, 204 from a single laser source 214. The identical laser beams 202, 204 are tuned to have the same power, cross-sectional diameter, and polarization direction. One of the half-wave plates 224 is rotated to yield laser beams with the same power. The other half-wave plate 238 is rotated to yield laser beams with the same polarization direction.

摘要翻译： 双光束激光切割系统使用激光束偏振来输出两个相同的激光束。 与单激光切割系统相比，双重相同的激光束被适当地间隔开以同时切割水，从而增加激光切割系统的吞吐量。 在一个实施方案中，双光束激光切割系统100利用光束扩展器220，两个半波片224,238，偏振分束器228，反射镜236和两个透镜234,242来提供两个相同的激光束202 ，204来自单个激光源214.相同的激光束202,204被调谐为具有相同的功率，横截面直径和偏振方向。 半波片224中的一个旋转以产生具有相同功率的激光束。 旋转另一个半波片238以产生具有相同偏振方向的激光束。

公开(公告)号：US08372203B2

公开(公告)日：2013-02-12

申请号：US11242299

申请日：2005-09-30

申请人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

发明人： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger N. Anderson

IPC分类号： C23C16/48 ,  C23C16/46 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/46 ,  C23C16/481 ,  C23C16/52

摘要： A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

摘要翻译： 成膜系统10包括由侧壁18和顶盖11限定的处理室15.在一个实施例中，基座16可旋转地设置在系统10中，并且与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305下方以加热基板19.在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基板19的温度。 基板19的温度由来自高温计58的高温测量数据获得。