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    MICROSTRUCTURED PATTERN INSPECTION METHOD
    2.
    发明申请
    MICROSTRUCTURED PATTERN INSPECTION METHOD 有权
    微结构图案检测方法

    公开(公告)号：US20090020699A1

    公开(公告)日：2009-01-22

    申请号：US12208389

    申请日：2008-09-11

    申请人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    发明人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    IPC分类号： G01N23/225

    CPC分类号： G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

    摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

    摘要翻译： 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

    Microstructured pattern inspection method
    3.
    发明授权
    Microstructured pattern inspection method 有权
    微结构图案检验方法

    公开(公告)号：US07435959B2

    公开(公告)日：2008-10-14

    申请号：US11798395

    申请日：2007-05-14

    申请人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    发明人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    IPC分类号： G01N23/225

    CPC分类号： G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

    摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

    摘要翻译： 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

    Microstructured pattern inspection method
    4.
    发明授权
    Microstructured pattern inspection method 有权

    公开(公告)号：US07217923B2

    公开(公告)日：2007-05-15

    申请号：US11197584

    申请日：2005-08-05

    申请人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    发明人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    IPC分类号： G01N23/225

    CPC分类号： G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

    摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

    Microstructured pattern inspection method
    5.
    发明申请
    Microstructured pattern inspection method 有权
    微结构图案检验方法

    公开(公告)号：US20050277029A1

    公开(公告)日：2005-12-15

    申请号：US11197584

    申请日：2005-08-05

    申请人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    发明人： Fumihiro Sasajima ,  Osamu Komuro ,  Fumio Mizuno

    IPC分类号： H01L21/027 ,  B32B3/00 ,  G01B11/00 ,  G01N23/225 ,  G01Q30/02 ,  G01Q30/04 ,  G03F7/20 ,  H01L21/66

    CPC分类号： G03F7/70608 ,  G01N23/225 ,  G06T7/0004 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2487

    摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

    摘要翻译： 相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。 通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。 此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且 分析相应的趋势。 因此，检测到步进器或晶片异常。

    Resist removing method, and curable pressure-sensitive adhesive, adhesive sheets and apparatus used for the method
    7.
    发明授权
    Resist removing method, and curable pressure-sensitive adhesive, adhesive sheets and apparatus used for the method 失效
    抗蚀剂除去方法和可固化的压敏粘合剂，用于该方法的粘合片和设备

    公开(公告)号：US5466325A

    公开(公告)日：1995-11-14

    申请号：US288988

    申请日：1994-08-11

    申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Yutaka Moroishi ,  Makoto Sunakawa ,  Michirou Kawanishi

    发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Yutaka Moroishi ,  Makoto Sunakawa ,  Michirou Kawanishi

    IPC分类号： B29C63/00 ,  G03F7/34 ,  G03F7/42 ,  B32B7/10 ,  B32B31/00

    CPC分类号： B29C63/0013 ,  G03F7/343 ,  G03F7/42 ,  Y10S156/922 ,  Y10T156/11 ,  Y10T156/1189

    摘要： A method for removing a resist pattern formed on a semiconductor wafer, and a curable pressure-sensitive adhesive, adhesive sheets and an apparatus used for the method. The resist-removing method comprising adhering an adhesive tape on an upper surface of a resist pattern formed on an article and peeling off the resist pattern together with the adhesive tape; the curable pressure-sensitive adhesive constituting the adhesive tape, comprising a pressure-sensitive adhesive polymer containing a non-volatile compound having at least one unsaturated double bond in the molecule and having a good affinity with a resist material to be removed; the adhesive sheet comprising a film substrate having formed thereon the curable pressure-sensitive adhesive; and the resist-removing apparatus comprising a means for press-adhering the adhesive tape, a tape-peeling means, and a substrate-washing means.

    摘要翻译： 一种用于去除形成在半导体晶片上的抗蚀剂图案的方法，以及用于该方法的可固化压敏粘合剂，粘合片和设备。 抗蚀剂去除方法包括将粘合带粘附在形成在制品上的抗蚀剂图案的上表面上并与粘合带一起剥离抗蚀剂图案; 构成粘合带的可固化压敏粘合剂包括在分子中含有至少一个不饱和双键的非挥发性化合物并且与要去除的抗蚀剂材料具有良好亲和性的压敏粘合剂聚合物; 所述粘合片包括其上形成有所述可固化压敏粘合剂的膜基材; 并且抗蚀剂去除装置包括用于压粘粘合带的装置，带剥离装置和基板清洗装置。

    Alumina porcelain compositions
    8.
    发明授权
    Alumina porcelain compositions 失效
    氧化铝瓷组成

    公开(公告)号：US4720471A

    公开(公告)日：1988-01-19

    申请号：US824472

    申请日：1986-01-31

    申请人： Minato Ando ,  Masaaki Ito ,  Fumio Mizuno

    发明人： Minato Ando ,  Masaaki Ito ,  Fumio Mizuno

    IPC分类号： C04B35/111 ,  H01B3/12 ,  C04B35/10 ,  C04B35/46

    CPC分类号： C04B35/111

    摘要： A sintered alumina porcelain composition is described consisting of a ternary composition consisting of from 96 to 99 mol % of Al.sub.2 O.sub.3 and the remainder consisting of CaO and TiO.sub.2 present in a CaO/TiO.sub.2 molar ratio of from 0.8/1 to 1.1/1 and SiO.sub.2, wherein based on 100 parts by weight of the ternary Al.sub.2 O.sub.3 --CaO--TiO.sub.2 composition, SiO.sub.2 is present in an amount within the range defined by the area within the straight lines connecting points A-B-C-D-E-F-A in the composition diagram set forth in the attached drawing for describing the relationship between the SiO.sub.2 content and the Al.sub.2 O.sub.3 molar ratio, provided that point A is excluded from the range of the SiO.sub.2 content, with said points having the following locations:______________________________________ SiO.sub.2 Al.sub.2 O.sub.3 (parts by weight) (mol %) ______________________________________ Point A 0 96 Point B 0.01 98 Point C 0.03 99 Point D 1.20 99 Point E 0.48 98 Point F 0.14 96 ______________________________________

    摘要翻译： 描述了一种烧结氧化铝瓷组合物，其由以下组成：由96至99mol％的Al 2 O 3组成的组成，其余由以CaO / TiO 2摩尔比为0.8 / 1-1.1 / 1和SiO 2组成的CaO和TiO 2组成， 其中，基于100重量份的三元Al 2 O 3 -C CaO-TiO 2组合物，SiO 2的量存在于由附图中阐述的组成图中连接点ABCDEFA的直线内的面积所限定的范围内，用于描述 SiO 2含量与Al 2 O 3摩尔比之间的关系，条件是将A点从SiO 2含量的范围排除，所述点具有以下位置：-SiO 2 Al 2 O 3 - （重量份）（摩尔％） - 点A 0 96-Point B 0.01 98 -Point C 0.03 99 -Point D 1.20 99 -Point E 0.48 98 -Point F 0.14 96 -

    Dielectric porcelain material
    9.
    发明授权
    Dielectric porcelain material 失效
    介质瓷材料

    公开(公告)号：US4643985A

    公开(公告)日：1987-02-17

    申请号：US756948

    申请日：1985-07-19

    申请人： Minato Ando ,  Masaaki Ito ,  Fumio Mizuno

    发明人： Minato Ando ,  Masaaki Ito ,  Fumio Mizuno

    IPC分类号： H01B3/12 ,  C04B35/00 ,  C04B35/111 ,  H01P7/10 ,  C04B35/10 ,  C04B35/46

    CPC分类号： C04B35/111

    摘要： Disclosed are dielectric porcelain materials having compositions falling in the quadrilateral area defined by connecting points A, B, C and D in the ternary diagram of components Al.sub.2 O.sub.3, CaTiO.sub.3 and SrTiO.sub.3 in the drawing. The points A, B, C and D are represented in mol % as follows:______________________________________ Al.sub.2 O.sub.3 CaTiO.sub.3 SiTiO.sub.3 ______________________________________ A 0.99 0.01 0 B 0.96 0.035 0.005 C 0.91 0.04 0.05 D 0.91 0.01 0.08. ______________________________________ The dielectric porcelain materials have thermal coefficients between -15 and +15 and a no-load Q not less than 4000.

    摘要翻译： 公开了具有落在四边形区域中的组成的电介质陶瓷材料，其在图中的Al 2 O 3，CaTiO 3和SrTiO 3组分的三元图中通过连接点A，B，C和D连接。 点A，B，C和D以摩尔％表示如下：-Al 2 O 3 CaTiO 3 SiTiO 3 -A 0.99 0.01 0 -B 0.96 0.035 0.005 -C 0.91 0.04 0.05 -D 0.91 0.01 0.08。 - 介电瓷材料的热系数介于-15和+15之间，空载Q不小于4000。