公开(公告)号：US5352912A

公开(公告)日：1994-10-04

申请号：US792493

申请日：1991-11-13

申请人： Emmanuel F. Crabbe ,  David L. Harame ,  Bernard S. Meyerson ,  Gary Patton ,  Johannes M. C. Stork

发明人： Emmanuel F. Crabbe ,  David L. Harame ,  Bernard S. Meyerson ,  Gary Patton ,  Johannes M. C. Stork

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/165 ,  H01L29/737 ,  H01L29/161 ,  H01L29/72

CPC分类号： H01L29/7378 ,  H01L29/737 ,  Y10S438/936

摘要： A heterojunction bipolar transistor having a single-crystal emitter with reduced charge storage and acceptable current gain is described herein. The heterojunction transistor comprises a collector region, a base region formed on the collector region, and a single-crystal emitter region grown on the base region by low temperature epitaxy. During the formation of the base region, a graded profile of 5-23% germanium is added to the base, as the distance to the collector region decreases, thereby decreasing the base bandgap as it approaches the collector region. Further, during the formation of the emitter region, a graded profile of 0-20% germanium is added to the emitter as the distance from the emitter-base junction increases. Thus, the emitter bandgap decreases as it moves farther from the emitter-base junction. The result of the above grading profiles is that the emitter bandgap is narrower at the emitter contact than the base bandgap at the emitter-base junction.

摘要翻译： 本文描述了具有具有降低的电荷存储和可接受的电流增益的单晶发射极的异质结双极晶体管。 异质结晶体管包括集电极区域，形成在集电极区域上的基极区域和通过低温外延生长在基极区域上的单晶发射极区域。 在形成基极区域时，随着到集电极区域的距离减小，5-23％的锗的梯度分布被添加到基极中，从而随着接近集电极区域而减小基带隙。 此外，在形成发射极区域期间，随着与发射极 - 基极结的距离增加，0-20％锗的梯度轮廓被添加到发射极。 因此，发射极带隙随着与发射极 - 基极结更远地移动而减小。 上述分级曲线的结果是，在发射极接触处的发射极带隙比发射极 - 基极结处的基极带隙更窄。