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1.
公开(公告)号:US09018758B2
公开(公告)日:2015-04-28
申请号:US12792002
申请日:2010-06-02
申请人: Chien Ling Hwang , Hui-Jung Tsai , Yi-Wen Wu , Chung-Shi Liu
发明人: Chien Ling Hwang , Hui-Jung Tsai , Yi-Wen Wu , Chung-Shi Liu
IPC分类号: H01L23/28 , H01L23/00 , H01L25/065
CPC分类号: H01L21/7688 , C23C14/34 , C25D5/022 , C25D7/00 , H01L21/76879 , H01L21/76883 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L2224/0361 , H01L2224/03826 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/13147 , H01L2224/1354 , H01L2224/13565 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/81024 , H01L2224/81193 , H01L2224/81447 , H01L2224/81815 , H01L2224/81911 , H01L2225/06513 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要: A bump has a non-metal sidewall spacer on a lower sidewall portion of Cu pillar, and a metal top cap on a top surface and an upper sidewall portion of the Cu pillar. The metal top cap is formed by an electroless or immersion plating technique after the non-metal sidewall spacer formation.
摘要翻译: 凸块在Cu柱的下侧壁部分上具有非金属侧壁间隔物,在Cu柱的上表面和上侧壁部分上具有金属顶盖。 在非金属侧壁间隔物形成之后,通过无电镀或浸镀技术形成金属顶盖。
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公开(公告)号:US08227334B2
公开(公告)日:2012-07-24
申请号:US12843760
申请日:2010-07-26
申请人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
发明人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
IPC分类号: H01L21/00
CPC分类号: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
摘要翻译: 形成器件的方法包括提供衬底,以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。
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公开(公告)号:US20110298123A1
公开(公告)日:2011-12-08
申请号:US12792002
申请日:2010-06-02
申请人: Chien Ling HWANG , Hui-Jung TSAI , Yi-Wen WU , Chung-Shi LIU
发明人: Chien Ling HWANG , Hui-Jung TSAI , Yi-Wen WU , Chung-Shi LIU
IPC分类号: H01L23/498
CPC分类号: H01L21/7688 , C23C14/34 , C25D5/022 , C25D7/00 , H01L21/76879 , H01L21/76883 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L2224/0361 , H01L2224/03826 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/13147 , H01L2224/1354 , H01L2224/13565 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/81024 , H01L2224/81193 , H01L2224/81447 , H01L2224/81815 , H01L2224/81911 , H01L2225/06513 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要: A bump has a non-metal sidewall spacer on a lower sidewall portion of Cu pillar, and a metal top cap on a top surface and an upper sidewall portion of the Cu pillar. The metal top cap is formed by an electroless or immersion plating technique after the non-metal sidewall spacer formation.
摘要翻译: 凸块在Cu柱的下侧壁部分上具有非金属侧壁间隔物,在Cu柱的上表面和上侧壁部分上具有金属顶盖。 在非金属侧壁间隔物形成之后,通过无电镀或浸镀技术形成金属顶盖。
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公开(公告)号:US20120018878A1
公开(公告)日:2012-01-26
申请号:US12843760
申请日:2010-07-26
申请人: Ming-Da Cheng , MIng-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
发明人: Ming-Da Cheng , MIng-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
IPC分类号: H01L21/288 , H01L29/45
CPC分类号: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
摘要翻译: 形成器件的方法包括提供衬底,以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。
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公开(公告)号:US09765289B2
公开(公告)日:2017-09-19
申请号:US13598272
申请日:2012-08-29
申请人: Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
发明人: Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号: C11D11/0047 , C11D7/06 , C11D7/3218 , H01L21/02071 , H01L21/67051 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/13005 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13169 , H01L2224/13171 , H01L2224/13172 , H01L2224/13184 , H01L2924/00014 , H01L2924/01079 , H01L2924/01082 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552
摘要: Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.
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公开(公告)号:US20130276837A1
公开(公告)日:2013-10-24
申请号:US13598272
申请日:2012-08-29
申请人: Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
发明人: Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号: C11D11/0047 , C11D7/06 , C11D7/3218 , H01L21/02071 , H01L21/67051 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/13005 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13169 , H01L2224/13171 , H01L2224/13172 , H01L2224/13184 , H01L2924/00014 , H01L2924/01079 , H01L2924/01082 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552
摘要: Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.
摘要翻译: 公开了在半导体器件封装过程中用于清洁金属触点上残留物的方法和化学溶剂。 用于清洁在金属接触物上形成的残余物的化学溶剂可以包含反应性无机组分和反应性有机组分。 该方法可以包括在第一压力下喷射具有化学溶剂的半导体器件,以及在低于第一压力的第二压力下用化学溶剂喷射半导体器件。
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公开(公告)号:US20120286423A1
公开(公告)日:2012-11-15
申请号:US13556016
申请日:2012-07-23
申请人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
发明人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
IPC分类号: H01L23/498
CPC分类号: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
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