公开(公告)号：US08570066B2

公开(公告)日：2013-10-29

申请号：US13355479

申请日：2012-01-20

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

IPC分类号： H03K19/0175 ,  H03K19/094

CPC分类号： H03K3/012 ,  H03K19/094 ,  H03K19/20

摘要： Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

公开(公告)号：US20120242370A1

公开(公告)日：2012-09-27

申请号：US13355479

申请日：2012-01-20

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

IPC分类号： H03K19/094

CPC分类号： H03K3/012 ,  H03K19/094 ,  H03K19/20

摘要： Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

摘要翻译： 公开了一种逆变器，NAND门和NOR门。 逆变器包括：上拉单元，由根据施加到栅极的电压向输出端子输出第一电源电压的第二薄膜晶体管构成; 根据施加到门的输入信号，将由接地电压输出到输出端的第五薄膜晶体管构成的下拉单元; 以及根据输入信号将第二电源电压或接地电压施加到第二薄膜晶体管的栅极的上拉驱动器。