公开(公告)号：US06801046B1

公开(公告)日：2004-10-05

申请号：US09670154

申请日：2000-09-26

申请人： Gengying Gao ,  Mohan Yegnashankaran ,  Hengyang (James) Lin ,  Kevin Weaver

发明人： Gengying Gao ,  Mohan Yegnashankaran ,  Hengyang (James) Lin ,  Kevin Weaver

IPC分类号： G01R31302

CPC分类号： G01R31/311 ,  G01R31/002

摘要： A method for non-destructively testing an IC device to determine the ESD performance. A laser beam is used to probe the diffusions of the device. The amount of light absorbed by the diffusions is determined by monitoring the degree to which light is reflected by the device. The amount of reflection is related to the ESD susceptibility of the device in that the greater the amount of reflection, the worse the ESD performance of the device.

摘要翻译： 一种用于非破坏性测试IC器件以确定ESD性能的方法。 激光束用于探测器件的扩散。 通过监测由装置反射光的程度来确定由扩散吸收的光量。 反射量与器件的ESD敏感性有关，因为反射量越大，器件的ESD性能就越差。