公开(公告)号：US06342453B1

公开(公告)日：2002-01-29

申请号：US09454423

申请日：1999-12-03

申请人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

发明人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

IPC分类号： H01L2131

CPC分类号： C23C16/45523 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/66242

摘要： A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included. In one embodiment, at least one of the first junction and the second junction is between different semiconductor materials to form at least one heterojunction. The heterojunction has a concentration profile of a semiconductor material such that an electric field changes in an opposite way to that of a mobility change.

摘要翻译： 根据确定的包含引入到基底上的物质的膜的浓度分布来控制物种的引入的方法和系统。 在一个方面，该方法包括根据确定的引入到基底上的膜的浓度分布来控制物种的流速，以及在基底上引入膜，所述膜在第一点处以第一浓度 并且在膜的第二点处具有与第一浓度不同的第二浓度。 此外，包括第一导电类型的集电极层，形成与集电极层的第一结的第二导电类型的基极层以及与基极层形成第二结的第一导电类型的发射极层的双极晶体管。 还包括被配置为将载流子引导通过发射极层到基极层并进入集电极层的电极。 在一个实施例中，第一结和第二结中的至少一个位于不同的半导体材料之间以形成至少一个异质结。 异质结具有半导体材料的浓度分布，使得电场以与迁移率变化相反的方式改变。

公开(公告)号：US06911401B2

公开(公告)日：2005-06-28

申请号：US10665026

申请日：2003-09-16

申请人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

发明人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/331 ,  H01L21/31

CPC分类号： C23C16/45523 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/66242

摘要： A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films generated using the flow rates; receiving a desired concentration profile of the species within a desired film; and generating a plurality of process steps that, when performed, would form the desired film with the desired concentration profile by controlling the flow rate of the species based, in part, on the first information and the desired concentration profile, wherein a first concentration of the species at a first point in the desired concentration profile differs from a second concentration of the species at a second point in the desired concentration profile. A computer-readable medium, system and apparatus are also disclosed.

摘要翻译： 一种由一个或多个处理器实现的方法，包括接收将物种的多个流速与使用流速生成的膜内的物种的相应浓度相关联的第一信息; 在期望的膜中接收物种的期望浓度分布; 并且产生多个工艺步骤，当所述多个工艺步骤执行时，将部分地基于所述第一信息和期望的浓度分布来控制所述物质的流速，从而形成具有期望浓度分布的所需膜，其中， 在所需浓度分布图中第一点处的物种与所需浓度分布图中第二个点处物种的第二浓度不同。 还公开了一种计算机可读介质，系统和装置。