摘要:
Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.
摘要:
A raised microstructure for use in a silicon based device, such as a microphone, is disclosed. The raised microstructure comprises a generally planar film having a ribbed sidewall supporting the film.
摘要:
An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.
摘要:
A solid-state transducer is disclosed. The transducer comprises a semi-conductor substrate forming a support structure and having an opening. A thin-film structure forming a diaphragm responsive to fluid-transmitted acoustic pressure is disposed over the opening. The transducer further includes a plurality of semi-conductor supports and tangential arms extending from the diaphragm edge for connecting the periphery of the diaphragm to the supports. The tangential arms permit the diaphragm to rotate relative to the supports to relieve film stress in the diaphragm. The transducer still further includes a plurality of stop bumps disposed between the substrate and the diaphragm. The stop bumps determine the separation of the diaphragm from the substrate when the transducer is biased.
摘要:
Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.
摘要:
An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.
摘要:
An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.
摘要:
Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.
摘要:
An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.