公开(公告)号：US20070015343A1

公开(公告)日：2007-01-18

申请号：US11182794

申请日：2005-07-18

申请人： Kuan-Jen Chung ,  Fu-Yao Yang ,  Williams Tsau ,  Chih-Hao Lin ,  Kun-Yu Lai

发明人： Kuan-Jen Chung ,  Fu-Yao Yang ,  Williams Tsau ,  Chih-Hao Lin ,  Kun-Yu Lai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095

摘要： A method for dicing a semiconductor wafer includes the steps of: forming grooves in an integrated circuit layer of the semiconductor wafer; forming a photoresist layer on the integrated circuit layer; forming V-shaped first notches, each of which is further indented from the integrated circuit layer; thinning the substrate; attaching a blue tape to the integrated circuit layer; forming V-shaped second notches, each of which is indented from the thinned substrate and each of which is registered with a respective one of the first notches such that the first and second notches cooperatively define imaginary breaking lines, respectively; and pressing the blue tape at positions that are aligned with the imaginary breaking lines, respectively.

摘要翻译： 一种用于切割半导体晶片的方法包括以下步骤：在半导体晶片的集成电路层中形成沟槽; 在所述集成电路层上形成光致抗蚀剂层; 形成V形的第一凹口，每个凹槽进一步从集成电路层缩进; 减薄基材; 将蓝色带粘附到集成电路层; 形成V形的第二凹口，每个凹槽从所述薄化的基板上凹入，并且每个凹槽分别与相应的一个所述第一凹口配准，使得所述第一和第二凹口分别协作地限定假想断裂线; 并分别在与虚拟断裂线对准的位置处按压蓝带。