公开(公告)号：US08486285B2

公开(公告)日：2013-07-16

申请号：US12544998

申请日：2009-08-20

申请人： Ronghui Zhou ,  Ming Jiang ,  Xiaohai Xiang ,  Jinwen Wang ,  Guanghong Luo ,  Yun-Fei Li

发明人： Ronghui Zhou ,  Ming Jiang ,  Xiaohai Xiang ,  Jinwen Wang ,  Guanghong Luo ,  Yun-Fei Li

IPC分类号： B44C1/22

CPC分类号： G11B5/855 ,  Y10T29/49048

摘要： A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.

摘要翻译： 用于形成写极的方法包括在晶片的衬底层上形成阻挡层，所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口，以及在停止层上形成缓冲层，所述缓冲层具有 在停止层的开口上方开口。 该方法还包括在晶片上镀覆一层磁性材料，在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料，在晶片上进行研磨或蚀刻操作，以去除第一 牺牲材料并且去除第一牺牲材料，在晶片上设置第二牺牲材料，以及在晶片上执行抛光操作以去除镶嵌沟槽，第二牺牲材料和缓冲层之上的磁性材料的区域。

公开(公告)号：US20110042349A1

公开(公告)日：2011-02-24

申请号：US12544998

申请日：2009-08-20

申请人： Ronghui ZHOU ,  Ming JIANG ,  Xiaohai XIANG ,  Jinwen WANG ,  Guanghong LUO ,  Yun-Fei LI

发明人： Ronghui ZHOU ,  Ming JIANG ,  Xiaohai XIANG ,  Jinwen WANG ,  Guanghong LUO ,  Yun-Fei LI

IPC分类号： B44C1/22 ,  B05D5/12

CPC分类号： G11B5/855 ,  Y10T29/49048

摘要： A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.

摘要翻译： 用于形成写极的方法包括在晶片的衬底层上形成阻挡层，所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口，以及在停止层上形成缓冲层，所述缓冲层具有 在停止层的开口上方开口。 该方法还包括在晶片上镀覆一层磁性材料，在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料，在晶片上进行研磨或蚀刻操作，以去除第一 牺牲材料并且去除第一牺牲材料，在晶片上设置第二牺牲材料，以及在晶片上执行抛光操作以去除镶嵌沟槽，第二牺牲材料和缓冲层之上的磁性材料的区域。

公开(公告)号：US09202480B2

公开(公告)日：2015-12-01

申请号：US12579316

申请日：2009-10-14

申请人： Xiaohai Xiang ,  Yun-Fei Li ,  Jinqiu Zhang ,  Hongping Yuan ,  Xianzhong Zeng ,  Hai Sun

发明人： Xiaohai Xiang ,  Yun-Fei Li ,  Jinqiu Zhang ,  Hongping Yuan ,  Xianzhong Zeng ,  Hai Sun

IPC分类号： B44C1/22 ,  C03C15/00 ,  H01L21/4763 ,  G11B5/31 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T428/11

摘要： Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.

摘要翻译： 本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。 在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。 该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角 去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

公开(公告)号：US20060196525A1

公开(公告)日：2006-09-07

申请号：US11070994

申请日：2005-03-03

申请人： Raymond Vrtis ,  Aaron Lukas ,  Mark O'Neill ,  Mark Bitner ,  Xiaohai Xiang ,  Eugene Karwacki

发明人： Raymond Vrtis ,  Aaron Lukas ,  Mark O'Neill ,  Mark Bitner ,  Xiaohai Xiang ,  Eugene Karwacki

IPC分类号： B08B3/12

CPC分类号： C23C16/4405

摘要： A method for removing a residue from a surface is disclosed herein. In one aspect, the method includes: providing a chamber containing the surface coated with the residue; providing in the chamber a cleaning composition of an oxidizing gas and optionally an organic species; and irradiating the cleaning composition with ultraviolet light to remove the residue from the surface. The surface can be, for example, a window of a processing chamber. In certain aspects, a reflective surface can be located within close proximity to the window to enhance cleaning efficiency.

摘要翻译： 本文公开了从表面除去残余物的方法。 一方面，该方法包括：提供包含涂有残留物的表面的室; 在室中提供氧化气体和任选的有机物质的清洁组合物; 并用紫外线照射清洗组合物以从表面除去残留物。 表面可以是例如处理室的窗口。 在某些方面，反射表面可以位于靠近窗口的位置，以提高清洁效率。

公开(公告)号：US08404128B1

公开(公告)日：2013-03-26

申请号：US12391095

申请日：2009-02-23

申请人： Hong Zhang ,  Ge Yi ,  Lei Wang ,  Dujiang Wan ,  Guanghong Luo ,  Xiaohai Xiang

发明人： Hong Zhang ,  Ge Yi ,  Lei Wang ,  Dujiang Wan ,  Guanghong Luo ,  Xiaohai Xiang

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/4902 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for providing a magnetic recording transducer having a pole are disclosed. The pole has side(s), a bottom, and a top wider than the bottom. The method and system include providing at least one side gap layer that covers the side(s) and the top of the pole. At least one sacrificial layer is provided on the side gap layer(s). The sacrificial layer(s) are wet etchable and cover the side gap layer(s). The magnetic recording transducer is planarized after the sacrificial layer(s) are provided. Thus, a portion of the side gap and sacrificial layer(s) is removed. A remaining portion of the sacrificial layer(s) is thus left. The method and system also include wet etching the sacrificial layer(s) to remove the remaining portion of the sacrificial layer(s). A wrap around shield is provided after the remaining portion of the sacrificial layer(s) is removed.

摘要翻译： 公开了一种用于提供具有极点的磁记录换能器的方法和系统。 电极具有侧面，底部和顶部比底部更宽。 该方法和系统包括提供覆盖极的侧面和顶部的至少一个侧面间隙层。 在侧间隙层上提供至少一个牺牲层。 牺牲层是可湿蚀刻的并且覆盖侧间隙层。 在提供牺牲层之后，磁记录传感器被平坦化。 因此，侧面间隙和牺牲层的一部分被去除。 因此留下牺牲层的剩余部分。 该方法和系统还包括湿蚀刻牺牲层以去除牺牲层的剩余部分。 在除去牺牲层的剩余部分之后提供环绕护罩。

公开(公告)号：US08191237B1

公开(公告)日：2012-06-05

申请号：US12470385

申请日：2009-05-21

申请人： Guanghong Luo ,  Ge Yi ,  Dujiang Wan ,  Lei Wang ,  Xiaohai Xiang ,  Ming Jiang

发明人： Guanghong Luo ,  Ge Yi ,  Dujiang Wan ,  Lei Wang ,  Xiaohai Xiang ,  Ming Jiang

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for providing a structure in a magnetic transducer is described. The method includes performing a first planarization that exposes a top surface of the magnetic transducer. This first planarization also terminates before a portion of a first planarization buffer layer is removed. The method also includes providing a second planarization buffer layer after the first planarization is performed. The second planarization buffer layer is above the first planarization buffer layer. The method also includes performing a second planarization. This second planarization does not completely remove the second planarization buffer layer. The method also includes performing a third planarization terminating after the first planarization buffer layer is exposed and before the first planarization buffer layer is completely removed.

摘要翻译： 描述了一种用于在磁换能器中提供结构的方法。 该方法包括执行暴露磁换能器的顶表面的第一平面化。 该第一平面化还在第一平坦化缓冲层的一部分被去除之前终止。 该方法还包括在执行第一平面化之后提供第二平坦化缓冲层。 第二平坦化缓冲层在第一平坦化缓冲层之上。 该方法还包括执行第二平面化。 该第二平面化不能完全去除第二平坦化缓冲层。 该方法还包括在第一平坦化缓冲层暴露之后并且在第一平坦化缓冲层被完全去除之前执行终止的第三平坦化。

公开(公告)号：US20110086240A1

公开(公告)日：2011-04-14

申请号：US12579316

申请日：2009-10-14

申请人： Xiaohai XIANG ,  Yun-Fei LI ,  Jinqiu ZHANG ,  Hongping YUAN ,  Xianzhong ZENG ,  Hai SUN

发明人： Xiaohai XIANG ,  Yun-Fei LI ,  Jinqiu ZHANG ,  Hongping YUAN ,  Xianzhong ZENG ,  Hai SUN

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T428/11

摘要： Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.

摘要翻译： 本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。 在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。 该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角 去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

公开(公告)号：US08343319B1

公开(公告)日：2013-01-01

申请号：US12238156

申请日：2008-09-25

申请人： Guanxiong Li ,  Xiaohai Xiang ,  Ming Mao ,  Mahendra Pakala

发明人： Guanxiong Li ,  Xiaohai Xiang ,  Ming Mao ,  Mahendra Pakala

IPC分类号： C23C14/34

CPC分类号： G11B5/3932 ,  G11B5/3163

摘要： A method and system for providing a magnetic transducer is described. The method and system define a magnetoresistive sensor in a track width direction, provide hard bias material(s) adjacent to the sensor in the track width direction, and provide sacrificial capping layer(s) on a portion of the hard bias material(s). The sacrificial capping layer(s) have a first height in a stripe height direction. The method and system also provide a mask for defining a stripe height of the sensor. The mask covers at least part of the sensor and has a second height in the stripe height direction. The second height is less than the first height. The method and system define the stripe height of the sensor while the mask covers the sensor. The sacrificial capping layer(s) are configured to prevent removal of the portion of the hard bias material(s) while the stripe height is defined.

摘要翻译： 描述了一种用于提供磁换能器的方法和系统。 该方法和系统在磁道宽度方向上限定磁阻传感器，在磁道宽度方向上提供与传感器相邻的硬偏置材料，并在硬偏置材料的一部分上提供牺牲性覆盖层， 。 牺牲覆盖层具有条纹高度方向上的第一高度。 该方法和系统还提供用于定义传感器的条纹高度的掩模。 掩模覆盖传感器的至少一部分，并且在条纹高度方向上具有第二高度。 第二个高度小于第一个高度。 该方法和系统定义传感器的条纹高度，同时掩模覆盖传感器。 牺牲覆盖层被构造成在限定条纹高度的同时防止去除硬偏移材料的一部分。