公开(公告)号：US20130105857A1

公开(公告)日：2013-05-02

申请号：US13720106

申请日：2012-12-19

Applicant: ABB Technology AG

Inventor： Peter STREIT

IPC: H01L29/74

CPC classification number: H01L29/74 ,  H01L29/0839 ,  H01L29/42308 ,  H01L29/7428

Abstract: A phase control thyristor includes a main gate structure and a plurality of local emitter shorts dots arranged in a shorts pattern on a cathode side of the thyristor. The main gate structure includes longitudinal main gate beams extending from a center region of the cathode side towards a circumferential region. Neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line. The shorts pattern is more homogeneous in a region closer to a main gate beam than in a region closer to an associated middle line. Adaptions to match shorts patterns in neighboring segments of the cathode side surface are made in regions away from the main gate beams such that an electron hole plasma spreading from the main gate beam is not interfered by any inhomogeneity of the shorts dots pattern. The design rules enable an improvement of the thyristor operational characteristics.

Abstract translation: 相位控制晶闸管包括主闸结构和在晶闸管的阴极侧以短路图形排列的多个局部发射极短路点。 主栅结构包括从阴极侧的中心区域朝向周向区域延伸的纵向主栅极光束。 相邻的主门梁相对于相关联的中间中间线布置一段距离。 在更接近主栅极的区域中，短路图案比在更靠近相关联的中间线的区域中更均匀。 在远离主栅极的区域中进行使阴极侧表面的相邻区段中的短路图案匹配的适配，使得从主栅极扩散的电子空穴等离子体不受短路点图案的任何不均匀性的干扰。 设计规则可以改善晶闸管的运行特性。