公开(公告)号：US20170155385A1

公开(公告)日：2017-06-01

申请号：US15360567

申请日：2016-11-23

Applicant: ABB Technology Oy

Inventor： Mikko Saarinen ,  Markus Oinonen

IPC: H03K17/567

CPC classification number: H03K17/567 ,  H02M1/08 ,  H02M2001/0009 ,  H02M2001/0029 ,  H02M2001/342 ,  H02M2001/346 ,  H03K17/0828 ,  H03K17/166 ,  H03K17/168 ,  H03K2217/0027 ,  Y02B70/1491

Abstract: A gate drive circuit adapted to control a power semiconductor component, the gate drive circuit comprising a gate driver connectable to a positive auxiliary voltage and to a negative auxiliary voltage, the gate drive circuit comprising a feedback circuit having an inductive coupling element for providing a feedback signal, wherein one end of the feedback circuit having the inductive coupling element is connected to a known reference potential and the other end of the feedback circuit is connected to the gate driver, and the inductive coupling element is inductively coupled to the main current path of the power semiconductor component for providing feedback signal to the gate driver based on the change rate of the current of the power semiconductor component for limiting the change rate of the current of the power semiconductor component.